Forced axisymmetric vibrations of a hollow piezoceramic sphere with an electrical method of excitation

1990 ◽  
Vol 26 (9) ◽  
pp. 818-822 ◽  
Author(s):  
I. A. Loza ◽  
N. A. Shul'ga
Keyword(s):  
Electrical Method ◽  
Piezoceramic Sphere ◽  
Hollow Piezoceramic Sphere ◽  
Forced Axisymmetric Vibrations

Nano Probe Analysis of Device Characteristics Affected by Ring Type Crystalline Defect

2011 ◽  
Author(s):  
Jong Hak Lee ◽  
Yu Jun Lee ◽  
Jung Sam Kim ◽  
Seo Kyung Jeong ◽  
Min Su Kim ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Physical Method ◽  
Hybrid Analysis ◽  
Electrical Method ◽  
Ring Type ◽  
Crystalline Defects ◽  
Address Data ◽  
Signal Input ◽  
Crystalline Defect ◽  
Top View

Abstract In this work, crystalline defects (dislocations) occurred in the silicon substrate during annealing SOD (Spin On Dielectric) which is an easy choice for its superior STI gap-fill ability. The reversal of address data that share same SIO (Signal Input Out) line in a DQ arises from crystalline defects. The failure analysis of physical methods has difficulty finding minute defects within the active because it is scarcely detectable from the top view. Situation can be well understood by electrical analysis using the nano probe. Due to its ability to probing contact nodes around the fail area, a ring type crystalline defect which is hardly detected from the top view was effectively analyzed by 3D TEM with the assistance of nano probe. This work shows that hybrid analysis of electrical method by nano probe and physical method by 3D TEM is useful and effective in failure analysis in semiconductor.

scholarly journals Dynamic Modeling and Flow Distribution of Complex Micron Scale Pipe Network

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 763
Author(s):  
Yao Zhao ◽  
Kai Zhang ◽  
Fengbei Guo ◽  
Mingyue Yang
Keyword(s):  
Calculation Method ◽  
Flow Distribution ◽  
Microfluidic Devices ◽  
Active Role ◽  
Fluid Simulation ◽  
Electrical Method ◽  
Fluid Network ◽  
Microfluidic Network ◽  
Simulation Calculation ◽  
Length Changes

A fluid simulation calculation method of the microfluidic network is proposed as a means to achieve the flow distribution of the microfluidic network. This paper quantitatively analyzes the influence of flow distribution in microfluidic devices impacted by pressure variation in the pressure source and channel length. The flow distribution in microfluidic devices with three types of channel lengths under three different pressure conditions is studied and shows that the results obtained by the simulation calculation method on the basis of the fluid network are close to those given by the calculation method of the conventional electrical method. The simulation calculation method on the basis of the fluid network studied in this paper has computational reliability and can respond to the influence of microfluidic network length changes to the fluid system, which plays an active role in Lab-on-a-chip design and microchannel flow prediction.

The Measurement of the Thickness of Metal Walls from One Surface Only, by an Electrical Method

1938 ◽  
Vol 140 (1) ◽  
pp. 349-398 ◽  
Author(s):  
B. M. Thornton ◽  
W. M. Thornton
Keyword(s):  
Potential Drop ◽  
Engineering Industry ◽  
Steel Plates ◽  
Electrical Method ◽  
Order Of Accuracy ◽  
Iron Castings ◽  
Engine Cylinder ◽  
External Power ◽  
Metal Wall ◽  
Core Shift

There is a definite need in the engineering industry for an instrument which will determine accurately the thickness of a metal wall from one side only, and which is portable, robust, independent of external power supply, and easy to operate. The instrument described in the paper fulfils all these conditions. The method is essentially that of comparing the resistance of a metal wall under test with that of a similarly shaped wall of the same material, of which the thickness is known. Current, usually under 10 amp., is supplied by a 6- or 12-volt battery to two current contacts held against the wall and usually spaced 2 or 3 inches apart. The current in the circuit is adjusted by varying the rheostat or the number of cells of the small car-battery employed, until the very small potential drop indicated by the deflexion of a galvanometer connected to two potential contacts reaches a predetermined fixed value. From a calibration curve the thickness of the wall corresponding to the current registered by the ammeter is determined. The contacts are made on the plates whose thickness is to be measured by means of Evershed and Vignoles spring-controlled rotating points that were originally designed for a four-point method of working. The flexible leads from these, sometimes 100 but usually 30 feet long, are rubber-covered, and are connected to the circuit in the box by plugs and sockets. These are removed for transport and carried in a separate box. The instrument was originally designed for measuring the thickness of boiler tubes, and examples are given showing that its accuracy in this respect is within a few thousandths of an inch. It was found in practice that the instrument could be used to measure the thickness of mild steel plates up to 1·25 inches and of iron castings, up to 3 inches, with the same order of accuracy. It is also used for the measurement of engine cylinder walls to detect core shift. Examples of these are given in the paper. One notable case was that of the examination of a bank of superheater tubes in a boiler that had given much trouble due to the use of an unsuitable chain-grate stoker. Thinned tubes were at once detected and on being cut out the thicknesses indicated by the instrument were confirmed. Examples are given of the regular use of the instrument in determining the thickness of boiler and superheater tubes, ships' hull plates, tank wagons, and various iron castings that were accessible from one side only.

Electrical method for the measurements of volume averaged electron density and effective coupled power to the plasma bulk

2016 ◽  
Vol 23 (2) ◽  
pp. 023504 ◽  
Author(s):  
M. Henault ◽  
G. Wattieaux ◽  
T. Lecas ◽  
J. P. Renouard ◽  
L. Boufendi
Keyword(s):  
Electron Density ◽  
Electrical Method ◽  
Plasma Bulk
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