Certain cases of the limiting equilibrium of a plate with an arbitrary boundary in plan view

1971 ◽  
Vol 7 (1) ◽  
pp. 60-65
Author(s):  
V. V. Al'pert
Keyword(s):  
Plan View ◽  
Arbitrary Boundary ◽  
Limiting Equilibrium

In situ observations of electromigration induced void behavior

1995 ◽  
Vol 53 ◽  
pp. 244-245
Author(s):  
T. Marieb ◽  
J. C. Bravman ◽  
P. Flinn ◽  
D. Gardner ◽  
M. Madden
Keyword(s):  
Electron Microscopy ◽  
Void Nucleation ◽  
Plan View ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Microelectronics Industry ◽  
In Situ Observations ◽  
Backscatter Electron Detector ◽  
Voltage Scanning

Electromigration and stress voiding have been active areas of research in the microelectronics industry for many years. While accelerated testing of these phenomena has been performed for the last 25 years[1-2], only recently has the introduction of high voltage scanning electron microscopy (HVSEM) made possible in situ testing of realistic, passivated, full thickness samples at high resolution.With a combination of in situ HVSEM and post-testing transmission electron microscopy (TEM) , electromigration void nucleation sites in both normal polycrystalline and near-bamboo pure Al were investigated. The effect of the microstructure of the lines on the void motion was also studied.The HVSEM used was a slightly modified JEOL 1200 EX II scanning TEM with a backscatter electron detector placed above the sample[3]. To observe electromigration in situ the sample was heated and the line had current supplied to it to accelerate the voiding process. After testing lines were prepared for TEM by employing the plan-view wedge technique [6].

HREM image simulations for supported metal particle catalysts

1993 ◽  
Vol 51 ◽  
pp. 736-737 ◽  
Author(s):  
Ming-Hui Yao ◽  
David J. Smith
Keyword(s):  
Fine Particles ◽  
Amorphous Material ◽  
Chemical Properties ◽  
Morphological Features ◽  
Metal Particles ◽  
Plan View ◽  
Profile View ◽  
Imaging Conditions ◽  
Image Simulations ◽  
Supported Metal

The chemical properties of catalysts often depend on the size, shape and structure of the supported metal particles. To characterize these morphological features and relate them to catalysis is one of the main objectives for HREM study of catalysts. However, in plan view imaging, details of the shape and structure of ultra-fine supported particles (<2nm) are often obscured by the overlapping contrast from the support, and supported sub-nanometer particles are sometimes even invisible. Image simulations may help in the interpretation at HREM images of supported particles in particular to extract useful information about the size, shape and structure of the particles. It should also be a useful tool for evaluating the imaging conditions in terms of visibility of supported particles. P. L. Gai et al have studied contrast from metal particles supported on amorphous material using multislice simulations. In order to better understand the influence of a crystalline support on the visibility and apparent morphological features of supported fine particles, we have calculated images of Pt and Re particles supported on TiO2(rutile) in both plan view and profile view.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

HOT CORROSION OF CERIA-YTTRIA STABILIZED ZIRCONIA PLASMA SPRAYED THERMAL BARRIER COATING BY EUTECTIC VANDIUM PENTAOXIDE-SODIUM SULFATE

2018 ◽  
Vol 18 (1) ◽  
pp. 182-192 ◽  
Author(s):  
Mohammed J Kadhim ◽  
Mohammed H Hafiz ◽  
Maryam A Ali Bash
Keyword(s):  
Thermal Barrier Coating ◽  
Hot Corrosion ◽  
Monoclinic Phase ◽  
Volume Fraction ◽  
High Volume ◽  
Thermal Barrier ◽  
Air Plasma ◽  
Plan View ◽  
Barrier Coating ◽  
Plasma Sprayed

The high temperature corrosion behavior of thermal barrier coating (TBC) systemconsisting of IN-738 LC superalloy substrate, air plasma sprayed Ni24.5Cr6Al0.4Y (wt%)bond coat and air plasma sprayed ZrO2-20 wt% ceria-3.6 wt% yttria (CYSZ) ceramic coatwere characterized. The upper surfaces of CYSZ covered with 30 mg/cm2 , mixed 45 wt%Na2SO4-55 wt% V2O5 salt were exposed at different temperatures from 800 to 1000 oC andinteraction times from 1 up to 8 h. The upper surface plan view of the coatings wereidentified for topography, roughness, chemical composition, phases and reaction productsusing scanning electron microscopy, energy dispersive spectroscopy, talysurf, and X-raydiffraction. XRD analyses of the plasma sprayed coatings after hot corrosion confirmed thephase transformation of nontransformable tetragonal (t') into monoclinic phase, presence ofYVO4 and CeVO4 products. Analysis of the hot corrosion CYSZ coating confirmed theformation of high volume fraction of YVO4, with low volume fractions of CeOV4 and CeO2.The formation of these compounds were combined with formation of monoclinic phase (m)from transformation of nontransformable tetragonal phase (t').

The Effect of the Microstructure of Diffusion Barriers on the Palladium Activation for Electroless Copper Deposition

2002 ◽  
Vol 716 ◽  
Author(s):  
Seok Woo Hong ◽  
Yong Sun Lee ◽  
Ki-Chul Park ◽  
Jong-Wan Park
Keyword(s):  
Electron Microscopy ◽  
Diffusion Barriers ◽  
Copper Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Electroless Copper ◽  
Sheet Resistance Measurement ◽  
Scanning Electron

AbstractThe effect of microstructure of dc magnetron sputtered TiN and TaN diffusion barriers on the palladium activation for autocatalytic electroless copper deposition has been investigated by using X-ray diffraction, sheet resistance measurement, field emission scanning electron microscopy (FE-SEM) and plan view transmission electron microscopy (TEM). The density of palladium nuclei on TaN diffusion barrier increases as the grain size of TaN films decreases, which was caused by increasing nitrogen content in TaN films. Plan view TEM results of TiN and TaN diffusiton barriers showed that palladium nuclei formed mainly on the grain boundaries of the diffusion barriers.

Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation

2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Barrier ◽  
Silicide Formation ◽  
Plan View ◽  
Processing Window

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.

Direct Plan View FIB Liftout for Near-Surface Defect Analysis in TEM

2013 ◽  
Author(s):  
Max L. Lifson ◽  
Carla M. Chapman ◽  
D. Philip Pokrinchak ◽  
Phyllis J. Campbell ◽  
Greg S. Chrisman ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Silicon Germanium ◽  
Focused Ion Beam ◽  
Surface Defects ◽  
Ion Beam ◽  
Misfit Dislocations ◽  
Tem Analysis ◽  
Plan View ◽  
Near Surface ◽  
Straightforward Method

Abstract Plan view TEM imaging is a powerful technique for failure analysis and semiconductor process characterization. Sample preparation for near-surface defects requires additional care, as the surface of the sample needs to be protected to avoid unintentionally induced damage. This paper demonstrates a straightforward method to create plan view samples in a dual beam focused ion beam (FIB) for TEM studies of near-surface defects, such as misfit dislocations in heteroepitaxial growths. Results show that misfit dislocations are easily imaged in bright-field TEM and STEM for silicon-germanium epitaxial growth. Since FIB tools are ubiquitous in semiconductor failure analysis labs today, the plan view method presented provides a quick to implement, fast, consistent, and straightforward method of generating samples for TEM analysis. While this technique has been optimized for near-surface defects, it can be used with any application requiring plan view TEM analysis.

Failure Analysis of Vertical Cavity Surface Emission Laser Diodes

2003 ◽  
Author(s):  
F. Siegelin ◽  
C. Brillert
Keyword(s):  
Failure Analysis ◽  
Complete Analysis ◽  
Cavity Surface ◽  
Dislocation Network ◽  
Plan View ◽  
Surface Emission ◽  
Optical Output ◽  
Vertical Cavity Surface ◽  
Vcsel Arrays ◽  
Vertical Cavity

Abstract A failure analysis case study for oxide confined vertical cavity surface emitting laser (VCSEL) arrays will be presented. The focus of this work is on devices failing with a reduced optical output due to a rapid degradation of the laser diode. The complete analysis flow will be shown, including electrical and optical characterization as well as detailed investigations on a nanometer scale. It is known that these fails are caused by dislocations. An advanced FIB preparation method enabled cross-section and plan view TEM to successfully visualize the complete extent of a dislocation network.

Identification of Root Cause Failure in Silicon on Insulator Body Contacted nFETs Using Scanning Capacitance Microscopy and Scanning Spreading Resistance Microscopy

2006 ◽  
Author(s):  
J.S. McMurray ◽  
C.M. Molella
Keyword(s):  
The Body ◽  
Silicon On Insulator ◽  
Back Side ◽  
Cross Sectional ◽  
Plan View ◽  
Spreading Resistance ◽  
Scanning Capacitance Microscopy ◽  
Root Cause ◽  
Cross Sectional Imaging ◽  
Active Channel

Abstract Root cause for failure of 90 nm body contacted nFETs was identified using scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). The failure mechanism was identified using both cross sectional imaging and imaging of the active silicon - buried oxide (BOX) interface in plan view. This is the first report of back-side plan view SCM and SSRM data for SOI devices. This unique plan view shows the root cause for the failure is an under doped link up region between the body contacts and the active channel of the device.

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