Determination of the contact thermal resistance from the solution of the inverse problem of thermal conductivity

1989 ◽  
Vol 56 (3) ◽  
pp. 293-296
Author(s):  
L. V. Kim
Author(s):  
K. K. Abgarian ◽  
R. G. Noskov ◽  
D. L. Reviznikov

The rapid development of electronics leads to the creation and use of electronic components of small dimensions, including nanoelements of complex, layered structure. The search for effective methods for cooling electronic systems dictates the need for the development of methods for the numerical analysis of heat transfer in nanostructures. A characteristic feature of energy transfer in such systems is the dominant role of contact thermal resistance at interlayer interfaces. Since the contact resistance depends on a number of factors associated with the technology of heterostructures manufacturing, it is of great importance to determine the corresponding coefficients from the results of temperature measurements.The purpose of this paper is to evaluate the possibility of reconstructing the thermal resistance coefficients at the interfaces between layers by solving the inverse problem of heat transfer.The complex of algorithms includes two major blocks — a block for solving the direct heat transfer problem in a layered nanostructure and an optimization block for solving the inverse problem. The direct problem was formulated in an algebraic (finite difference) form under the assumption of a constant temperature within each layer, which is due to the small thickness of the layers. The inverse problem was solved in the extreme formulation, the optimization was carried out using zero-order methods that do not require the calculation of the derivatives of the optimized function. As a basic optimization algorithm, the Nelder—Mead method was used in combination with random restarts to search for a global minimum.The results of the identification of the contact thermal resistance coefficients obtained in the framework of a quasi-real experiment are presented. The accuracy of the identification problem solution is estimated as a function of the number of layers in the heterostructure and the «measurements» error.The obtained results are planned to be used in the new technique of multiscale modeling of thermal regimes of the electronic component base of the microwave range, when identifying the coefficients of thermal conductivity of heterostructure.


2020 ◽  
Vol 40 (8) ◽  
pp. 622-627
Author(s):  
I. V. Lavrov ◽  
A. A. Kochetygov ◽  
V. V. Bardushkin ◽  
A. P. Sychev ◽  
V. B. Yakovlev

Author(s):  
Danie`le Fournier ◽  
Jean Paul Roger ◽  
Christian Fretigny

Lateral heat diffusion thermoreflectance is a very powerful tool for determining directly the thermal diffusivity of layered structures. To do that, experimental data are fitted with the help of a heat diffusion model in which the ratio between the thermal conductivity k and the thermal diffusivity D of each layer is fixed, and the thermal properties of the substrate are known. We have shown in a previous work that it is possible to determine independently the thermal diffusivity and the thermal conductivity of a metallic layer deposited on an insulator, by taking into consideration all the data obtained at different modulation frequencies. Moreover, it is well known that to prevent a lack of adhesion of a gold film deposited on substrates like silica, an intermediate very thin (Cr or Ti) layer is deposited to assure a good thermal contact. We extend our previous work: the asymptotic behaviour determination of the surface temperature wave at large distances from the modulated point heat source for one layer deposited on the substrate to the two layers model. In this case (very thin adhesion coating whose thermal properties and thickness are known), it can be establish that the thermal diffusivity and the thermal conductivity of the top layer can still be determined independently. It is interesting to underline that the calculus can also be extended to the case of a thermal contact resistance which has often to be taken into account between two solids. We call thermal resistance a very thin layer exhibiting a very low thermal conductivity. In this case, the three parameters we have to determine are the thermal conductivity and the thermal diffusivity of the layer and the thermal resistance. We will show that, in this case, the thermal conductivity of the layer is always obtained independently of a bound of the couple thermal resistance – thermal diffusivity, the thermal diffusivity being under bounded and the thermal resistance lower bounded. Experimental results on thin gold layers deposited on silica with and without adhesion layers are presented to illustrate the method. Discussions on the accuracy will also be presented.


1992 ◽  
Vol 35 (11) ◽  
pp. 1298-1300
Author(s):  
V. P. Belokurov ◽  
V. I. Klyuchnikov ◽  
S. V. Belokurov

Sign in / Sign up

Export Citation Format

Share Document