Calculation of the local electron level in a fractured polyethylene molecule

1979 ◽  
Vol 14 (5) ◽  
pp. 619-623 ◽  
Author(s):  
A. I. Gubanov
Keyword(s):  
Local Electron ◽  
Electron Level ◽  
Polyethylene Molecule

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Analysis of Operation Margin and Read Speed in 6T- and 8T-SRAM with Local Electron Injected Asymmetric Pass Gate Transistor

2012 ◽  
Vol E95-C (4) ◽  
pp. 564-571 ◽  
Author(s):  
Kousuke MIYAJI ◽  
Kentaro HONDA ◽  
Shuhei TANAKAMARU ◽  
Shinji MIYANO ◽  
Ken TAKEUCHI
Keyword(s):  
Local Electron

scholarly journals Limited local electron-lattice coupling in manganites: An electron diffraction study

2008 ◽  
Vol 77 (9) ◽  
Author(s):  
D. Sánchez ◽  
M. J. Calderón ◽  
J. Sánchez-Benítez ◽  
A. J. Williams ◽  
J. P. Attfield ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Diffraction Study ◽  
Electron Diffraction Study ◽  
Local Electron ◽  
Lattice Coupling

New Aspects of Quasi-Kondo Physics: Two-Level Kondo and Strongly Coupled Local Electron–Phonon Systems

2005 ◽  
Vol 74 (1) ◽  
pp. 49-58 ◽  
Author(s):  
Satoshi Yotsuhashi ◽  
Masatsugu Kojima ◽  
Hiroaki Kusunose ◽  
Kazumasa Miyake
Keyword(s):  
Local Electron ◽  
Strongly Coupled ◽  
Kondo Physics

SPATIAL DISTRIBUTION OF KNIGHT SHIFT AROUND QUANTUM HALL EDGE CHANNELS USING RESISTIVELY-DETECTED NMR

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1440-1444
Author(s):  
S. MASUBUCHI ◽  
K. HAMAYA ◽  
T. MACHIDA
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Spatial Distribution ◽  
Knight Shift ◽  
Nuclear Polarization ◽  
Filling Factor ◽  
Quantum Hall ◽  
Electron Spin Polarization ◽  
Local Electron ◽  
Nmr Spectrum ◽  
Edge Channel

We develop a method for studying spatial distribution of the Knight shift using resistively-detected nuclear magnetic resonance (NMR) in an AlGaAs/GaAs quantum Hall device. By controlling the position of the dynamic nuclear polarization with the side-gate voltage, the spatial distribution of the NMR spectrum is investigated in a vicinity of quantum Hall edge channels. The value of Knight shift gradually changes in the region where the local Landau-level filling factor is between ν = 1 and ν = 2, implying that the change of the local electron spin polarization is detected in the edge channel.

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