Reaction of diazoacetic ester with unsaturated compounds of silicon and germanium

Author(s):  
I. E. Dolgii ◽  
A. P. Meshcheryakov ◽  
G. K. Gaivoronskaya
Author(s):  
Harry A. Atwater ◽  
C.M. Yang ◽  
K.V. Shcheglov

Studies of the initial stages of nucleation of silicon and germanium have yielded insights that point the way to achievement of engineering control over crystal size evolution at the nanometer scale. In addition to their importance in understanding fundamental issues in nucleation, these studies are relevant to efforts to (i) control the size distributions of silicon and germanium “quantum dots𠇍, which will in turn enable control of the optical properties of these materials, (ii) and control the kinetics of crystallization of amorphous silicon and germanium films on amorphous insulating substrates so as to, e.g., produce crystalline grains of essentially arbitrary size.Ge quantum dot nanocrystals with average sizes between 2 nm and 9 nm were formed by room temperature ion implantation into SiO2, followed by precipitation during thermal anneals at temperatures between 30°C and 1200°C[1]. Surprisingly, it was found that Ge nanocrystal nucleation occurs at room temperature as shown in Fig. 1, and that subsequent microstructural evolution occurred via coarsening of the initial distribution.


1964 ◽  
Vol 83 (7) ◽  
pp. 433-502 ◽  
Author(s):  
L.D. Bogomolova ◽  
V.N. Lazukin ◽  
I.V. Chepeleva

2021 ◽  
Vol 48 ◽  
pp. 101522
Author(s):  
Shi Nan ◽  
Wang Hai-Bin ◽  
Gao Li ◽  
Zhang Jing-Yao ◽  
Guo Jian-Feng ◽  
...  

1931 ◽  
Vol 94 (2) ◽  
pp. 411-413
Author(s):  
G. Payling Wright ◽  
James B. Conant ◽  
S.E. Kamerling

2021 ◽  
Author(s):  
Federico Picollo ◽  
Alfio Battiato ◽  
Federico Bosia ◽  
Fabio Scaffidi Muta ◽  
Paolo Olivero ◽  
...  

Carbon exhibits a remarkable range of structural forms, due to the availability of sp3, sp2 and sp1 chemical bonds. Contrarily to other group IV elements such as silicon and germanium,...


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