Experimental determination of the conditions for the granulation (breakdown) of aluminum oxide drops in a high-temperature gas flow

1974 ◽  
Vol 26 (5) ◽  
pp. 627-629 ◽  
Author(s):  
L. D. Buglaeva ◽  
I. I. Vernidub ◽  
Yu. A. Korsunov ◽  
�. M. Timokhin ◽  
A. P. Tishin
Keyword(s):  
High Temperature ◽  
Aluminum Oxide ◽  
Experimental Determination ◽  
Gas Flow ◽  
High Temperature Gas

A method of experimental determination of the profiles of temperature and composition of a high-temperature gas stream

1980 ◽  
Vol 38 (5) ◽  
pp. 533-537
Author(s):  
V. E. Godlevskii ◽  
V. N. Gradov ◽  
V. Ya. Levin ◽  
V. E. Nigodyuk ◽  
S. A. Shustov
Keyword(s):  
High Temperature ◽  
Experimental Determination ◽  
High Temperature Gas

Experimental determination of emissivities of high-temperature gas flows

1972 ◽  
Vol 3 (6) ◽  
pp. 106-109 ◽  
Author(s):  
A. N. Rumynskii ◽  
N. V. Chereshneva
Keyword(s):  
High Temperature ◽  
Experimental Determination ◽  
Gas Flows ◽  
High Temperature Gas

DISPERSED PHASE VELOCITY IN A HIGH-TEMPERATURE GAS FLOW

2019 ◽  
Vol 23 (4) ◽  
pp. 319-328
Author(s):  
Dmitry V. Nesterovich ◽  
Oleg G. Penyazkov ◽  
Yu. A. Stankevich ◽  
M. S. Tretyak ◽  
Vladimir V. Chuprasov ◽  
...  
Keyword(s):  
High Temperature ◽  
Phase Velocity ◽  
Gas Flow ◽  
Dispersed Phase ◽  
High Temperature Gas

Comparative Study of GaN Growth Process by MOVPE

1999 ◽  
Vol 572 ◽  
Author(s):  
Jingxi Sun ◽  
J. M. Redwing ◽  
T. F. Kuech
Keyword(s):  
High Temperature ◽  
Comparative Study ◽  
Gas Phase ◽  
Residence Time ◽  
Gas Flow ◽  
Flow Sheet ◽  
Flow Zone ◽  
High Quality ◽  
Phase Temperature ◽  
High Temperature Gas

ABSTRACTA comparative study of two different MOVPE reactors used for GaN growth is presented. Computational fluid dynamics (CFD) was used to determine common gas phase and fluid flow behaviors within these reactors. This paper focuses on the common thermal fluid features of these two MOVPE reactors with different geometries and operating pressures that can grow device-quality GaN-based materials. Our study clearly shows that several growth conditions must be achieved in order to grow high quality GaN materials. The high-temperature gas flow zone must be limited to a very thin flow sheet above the susceptor, while the bulk gas phase temperature must be very low to prevent extensive pre-deposition reactions. These conditions lead to higher growth rates and improved material quality. A certain range of gas flow velocity inside the high-temperature gas flow zone is also required in order to minimize the residence time and improve the growth uniformity. These conditions can be achieved by the use of either a novel reactor structure such as a two-flow approach or by specific flow conditions. The quantitative ranges of flow velocities, gas phase temperature, and residence time required in these reactors to achieve high quality material and uniform growth are given.

scholarly journals New high temperature gas flow cell developed at ISIS

2010 ◽  
Vol 251 ◽  
pp. 012090 ◽  
Author(s):  
R Haynes ◽  
S T Norberg ◽  
S G Eriksson ◽  
M A H Chowdhury ◽  
C M Goodway ◽  
...  
Keyword(s):  
High Temperature ◽  
Gas Flow ◽  
Flow Cell ◽  
High Temperature Gas
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