Resistance to dislocation motion in copper-based solid solutions with a statistically disordered atomic distribution

1971 ◽  
Vol 14 (3) ◽  
pp. 304-307 ◽  
Author(s):  
E. F. Dudarev ◽  
N. V. Nikitina ◽  
L. D. Dikusar ◽  
V. E. Panin
1968 ◽  
Vol 17 (147) ◽  
pp. 535-551 ◽  
Author(s):  
K. R. Evans ◽  
W. F. Flanagan

1981 ◽  
Vol 24 (12) ◽  
pp. 1091-1094
Author(s):  
V. V. Ovchinnikov ◽  
V. S. Litvinov ◽  
N. V. Zvigintsev

2002 ◽  
Vol 42 (12) ◽  
pp. 1546-1552 ◽  
Author(s):  
Daisuke Terada ◽  
Fuyuki Yoshida ◽  
Hideharu Nakashima ◽  
Hiroshi Abe ◽  
Yoshikuni Kadoya

2020 ◽  
Author(s):  
Bohdan Koman ◽  
Volodymyr Yuzevych

The regularities of macroplastic deformation of narrow-band semiconductors of HgTe-CdTe solid solution crystals were studied by the uniaxial compression method on a Regel-Dubov relaxometer. The four-stage character of the strain hardening curve “stress-strain” is established. The influence of stoichiometry, load velocity and temperature on the nature of load curves is investigated. From the experiments on the relaxation of mechanical stresses, a thermoactivation analysis of the kinetics of microplastic deformation was performed. Thermoactivation parameters of dislocation motion are estimated. The criteria for performing the Pierrels mechanism of dislocation motion in these crystals are investigated. The influence of light on the macroplastic fluidity of CdxHg1-xTe crystals is described.


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