Hall effect in the ternary ordered alloys Ni3(Mn, Fe) and Ni3(Mn, Co) 1. Disordered solution solutions

1970 ◽  
Vol 13 (3) ◽  
pp. 294-301
Author(s):  
V. M. Zhukova ◽  
V. P. Fadin
Keyword(s):  
2008 ◽  
Vol 50 (6) ◽  
pp. 1071-1075 ◽  
Author(s):  
A. E. Elsukova ◽  
N. S. Perov ◽  
V. N. Prudnikov ◽  
A. B. Granovskiĭ ◽  
A. K. Arzhnikov ◽  
...  
Keyword(s):  

Author(s):  
Gerald B. Feldewerth

In recent years an increasing emphasis has been placed on the study of high temperature intermetallic compounds for possible aerospace applications. One group of interest is the B2 aiuminides. This group of intermetaliics has a very high melting temperature, good high temperature, and excellent specific strength. These qualities make it a candidate for applications such as turbine engines. The B2 aiuminides exist over a wide range of compositions and also have a large solubility for third element substitutional additions, which may allow alloying additions to overcome their major drawback, their brittle nature.One B2 aluminide currently being studied is cobalt aluminide. Optical microscopy of CoAl alloys produced at the University of Missouri-Rolla showed a dramatic decrease in the grain size which affects the yield strength and flow stress of long range ordered alloys, and a change in the grain shape with the addition of 0.5 % boron.


1974 ◽  
Vol 35 (C7) ◽  
pp. C7-47-C7-52 ◽  
Author(s):  
G. VANDERSCHAEVE
Keyword(s):  

1980 ◽  
Vol 41 (C8) ◽  
pp. C8-467-C8-469 ◽  
Author(s):  
R. Asomoza ◽  
J. B. Bieri ◽  
A. Fert ◽  
B. Boucher ◽  
J. C. Ousset

2015 ◽  
Vol 185 (5) ◽  
pp. 479-488 ◽  
Author(s):  
Aleksandr F. Barabanov ◽  
Yurii M. Kagan ◽  
Leonid A. Maksimov ◽  
Andrey V. Mikheyenkov ◽  
Tatyana V. Khabarova
Keyword(s):  

2008 ◽  
Vol 128 (2) ◽  
pp. 125-130
Author(s):  
Kan Akatsu ◽  
Nobuhiro Mitomo ◽  
Shinji Wakui

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.


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