Measuring the spectral density of the gate noise current in field-effect transistors with a p-n junction

1975 ◽  
Vol 18 (11) ◽  
pp. 1675-1677
Author(s):  
L. P. Feshchenko ◽  
V. Z. Chernikov
Keyword(s):  
Spectral Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Noise Current

Scaling behaviors of transient noise current in organic field-effect transistors

2012 ◽  
Vol 13 (8) ◽  
pp. 1370-1376 ◽  
Author(s):  
K.Y. Choo ◽  
S.V. Muniandy ◽  
C.L. Chua ◽  
K.L. Woon
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Noise Current

1/f Noise in Graphene Field-Effect Transistors: Dependence on the Device Channel Area

2011 ◽  
Vol 1344 ◽  
Author(s):  
Guanxiong Liu ◽  
Sergey Rumyantsev ◽  
William Stillman ◽  
Michael Shur ◽  
Alexander A. Balandin
Keyword(s):  
Spectral Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Bilayer Graphene ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
Noise Sources ◽  
Noise Spectral Density ◽  
Noise Characteristics

ABSTRACTWe carried out a systematic experimental study of the low-frequency noise characteristics in a large number of single and bilayer graphene transistors. The prime purpose was to determine the dominant noise sources in these devices and the effect of aging on the current-voltage and noise characteristics. The analysis of the noise spectral density dependence on the surface area of the graphene channel indicates that the dominant contributions to the 1/f electronic noise come from the graphene channel region itself. Aging of graphene transistors due to exposure to ambient for over a month resulted in substantially increased noise, which was attributed to the decreasing mobility of graphene and increasing contact resistance. The noise spectral density in both single and bilayer graphene transistors shows a non-monotonic dependence on the gate bias. This observation confirms that the 1/f noise characteristics of graphene transistors are qualitatively different from those of conventional silicon metal-oxide-semiconductor field-effect transistors.

Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Organic Single Crystal

Organic Three-dimensional Field-effect Transistors

2008 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional
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