Electrical conductivity of polycrystalline sphalerite boron nitride BNsp obtained by direct phase transformation from pyrolytic boron nitride

1992 ◽  
Vol 31 (8) ◽  
pp. 650-653
Author(s):  
N. A. Shishonok ◽  
V. B. Shipilo
Keyword(s):  
Electrical Conductivity ◽  
Phase Transformation ◽  
Boron Nitride ◽  
Pyrolytic Boron Nitride

scholarly journals Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang
Keyword(s):  
Phase Transition ◽  
Electrical Conductivity ◽  
High Pressure ◽  
Phase Transformation ◽  
Transport Properties ◽  
Electrical Transport ◽  
Structural Phase ◽  
Structure Evolution ◽  
Systematic Research ◽  
Electrical Transport Properties

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.

Ion implantation induced phase transformation in carbon and boron nitride thin films

2005 ◽  
Vol 14 (8) ◽  
pp. 1395-1401 ◽  
Author(s):  
T.W.H. Oates ◽  
L. Ryves ◽  
F.A. Burgmann ◽  
B. Abendroth ◽  
M.M.M. Bilek ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Boron Nitride ◽  
Ion Implantation

scholarly journals An anisotropic layer-by-layer carbon nanotube/boron nitride/rubber composite and its application in electromagnetic shielding

Nanoscale ◽  
2020 ◽  
Vol 12 (14) ◽  
pp. 7782-7791 ◽  
Author(s):  
Yanhu Zhan ◽  
Emanuele Lago ◽  
Chiara Santillo ◽  
Antonio Esaú Del Río Castillo ◽  
Shuai Hao ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Carbon Nanotube ◽  
Boron Nitride ◽  
Layer By Layer ◽  
Shielding Effectiveness ◽  
Anisotropic Layer ◽  
Emi Shielding ◽  
Emi Shielding Effectiveness ◽  
Rubber Composite

A carbon nanotube/boron nitride/rubber composite with anisotropic electrical conductivity exhibits an EMI shielding effectiveness of 22.41 dB mm−1 and a thermal conductivity equal to 0.25 W m−1 K−1.

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