Creep in the hot pressing of powders of titanium nitride, molybdenum disilicide, and zirconium and chromium diborides

1973 ◽  
Vol 12 (4) ◽  
pp. 272-276
Author(s):  
M. S. Koval'chenko
Keyword(s):  
Titanium Nitride ◽  
Hot Pressing ◽  
Molybdenum Disilicide

Hot pressing and vacuum sintering of fine titanium nitride powder

1979 ◽  
Vol 18 (12) ◽  
pp. 878-882 ◽  
Author(s):  
V. I. Torbov ◽  
V. N. Troitskii ◽  
A. Z. Rakhmatullina
Keyword(s):  
Titanium Nitride ◽  
Hot Pressing ◽  
Nitride Powder ◽  
Vacuum Sintering

Manufacture and Properties of AlON-TiN Particulate Composites

2007 ◽  
Vol 280-283 ◽  
pp. 1133-1138
Author(s):  
Zuo Tai Zhang ◽  
Xi Dong Wang ◽  
Mei Zhang ◽  
Wen Chao Li
Keyword(s):  
Mechanical Properties ◽  
Wear Resistance ◽  
Titanium Nitride ◽  
Oxidation Resistance ◽  
Hot Pressing ◽  
Oxidation Behavior ◽  
Particulate Composites ◽  
Aluminum Oxynitride

Dense aluminum oxynitride-titanium nitride (AlON-TiN) composites with 3~15wt% TiN were fabricated by hot pressing technique. The effect of the content of a dispersion-toughening aid, TiN, on the mechanical properties, oxidation resistance and wear resistance were studied and related to the microstructure. The composites with a content of 15wt% were characterized with the highest strength, 487 MPa, and the highest wear resistance properties. Oxidation behavior was studied and the results showed that AlON-TiN composites have excellent oxidation resistance.

Defects in molybdenum disilicide

1992 ◽  
Vol 50 (1) ◽  
pp. 170-171
Author(s):  
T.E. Mitchell ◽  
S. R. Srinivasan ◽  
R. B. Schwarz
Keyword(s):  
Crystal Structure ◽  
High Temperature ◽  
Structural Material ◽  
Integrated Circuits ◽  
Mechanical Alloying ◽  
Hot Pressing ◽  
Molybdenum Disilicide ◽  
Electrical Conductor ◽  
Group 14 ◽  
High Temperature Structural Material

INTRODUCTION. Molybdenum disilicide(MoSi2) is used mainly as an electrical conductor in integrated circuits and as a heating element in furnaces. It is now being studied as a potential high temperature structural material because of its good strength and oxidation resistance. MoSi2 has the tetragonal Cllb crystal structure, space group 14/mmm, with a=3.202Å and c=7.85lÅ. At temperatures >1900°C, MoSi2 has the hexagonal C40 structure where the basal planes have ABC stacking. This compares with the AB stacking of the pseudo-hexagonal {110} planes of the tetragonal structure. In the present paper we will describe and discuss TEM observations of defects in MoSi2 prepared variously by hot pressing, plasma spraying and mechanical alloying.

ChemInform Abstract: Hot Pressing of Titanium Nitride Powders.

1986 ◽  
Vol 17 (12) ◽  
Author(s):  
E. RAPOPORT ◽  
C. BRODHAG ◽  
F. THEVENOT
Keyword(s):  
Titanium Nitride ◽  
Hot Pressing

Effect of the nickel-chromium binder on the densification kinetics of chromium carbide-titanium nitride cermets in hot pressing

2007 ◽  
Vol 46 (5-6) ◽  
pp. 228-235 ◽  
Author(s):  
V. G. Kayuk ◽  
M. S. Koval’chenko ◽  
I. S. Martsenyuk ◽  
O. N. Grigor’ev
Keyword(s):  
Titanium Nitride ◽  
Chromium Carbide ◽  
Hot Pressing ◽  
Nickel Chromium ◽  
Kinetics Of

Reactive Hot Pressing of Alumina-Molybdenum Disilicide Composites

2004 ◽  
Vol 85 (1) ◽  
pp. 258-260 ◽  
Author(s):  
William G. Fahrenholtz ◽  
Ronald E. Loehman ◽  
Kevin G. Ewsuk
Keyword(s):  
Hot Pressing ◽  
Molybdenum Disilicide ◽  
Reactive Hot Pressing

Evolution of the microstructure of Cu(Ti)/SiO2 layers annealed in NH3

1995 ◽  
Vol 53 ◽  
pp. 452-453
Author(s):  
J. Liu ◽  
N. D. Theodore ◽  
D. Adams ◽  
S. Russell ◽  
T. L. Alford ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Titanium Nitride ◽  
Large Scale ◽  
Standard Procedure ◽  
Alloy Film ◽  
Electron Beam Evaporation ◽  
Copper Metallization ◽  
Nominal Composition ◽  
Ti Alloy ◽  
Thermally Grown

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.

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