Temperature-programmed surface reactions of methanol on commercial Cu-containing catalysts

1989 ◽  
Vol 3 (4) ◽  
pp. 299-307 ◽  
Author(s):  
Kh. M. Minachev ◽  
K. P. Kotyaev ◽  
G. I. Lin ◽  
A. Y. Rozovskii
Keyword(s):  
Surface Reactions ◽  
Temperature Programmed

Surface Reactions in the Decomposition of Zinc Alkyls on Si(100)-2×1 Surfaces

1990 ◽  
Vol 204 ◽  
Author(s):  
M.A. Rueter ◽  
J.M. Vohs
Keyword(s):  
High Resolution ◽  
Surface Reactions ◽  
Temperature Programmed Desorption ◽  
Silicon Surfaces ◽  
Methyl Groups ◽  
Methyl Radicals ◽  
Resolution Electron ◽  
Temperature Programmed ◽  
Electron Energy Loss ◽  
Insight Into

ABSTRACTThe adsorption and reaction of dimethylzinc and diethylzinc on Si(100)-2×l surfaces was studied using temperature programmed desorption and high resolution electron energy loss spectroscopy. These zinc alkyls were found to dissociate at temperatures less than 300 K to produce adsorbed alkyl species and deposit zinc on the surface. During temperature programmed desorption zinc metal desorbed at 530 K leaving only alkyl species on the surface at higher temperatures. Surface methyl groups were found to decompose to carbon and hydrogen or desorb as methyl radicals, while surface ethyl groups underwent a series of surface reactions which resulted in three separate ethylene desorption peaks. The results of this study provide new insight into the reactions of group II metal alkyls on silicon surfaces.

Surface Reactions during Temperature-programmed Desorption and Reduction Experiments with Oxygen-Functionalized Carbon Blacks

2021 ◽  
pp. 150044
Author(s):  
Maximilian Göckeler ◽  
Cornelius M. Berger ◽  
Maximilian Purcel ◽  
Ralf Bergsträßer ◽  
Arndt-Peter Schinkel ◽  
...  
Keyword(s):  
Surface Reactions ◽  
Temperature Programmed Desorption ◽  
Carbon Blacks ◽  
Temperature Programmed

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

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