Variant of the ?Spectroscopic? parametrization of the CNDO method including transition metals

1987 ◽  
Vol 27 (4) ◽  
pp. 656-657 ◽  
Author(s):  
V. N. Yakovlev ◽  
V. E. L'vovskii ◽  
N. S. Panina
1984 ◽  
Vol 49 (12) ◽  
pp. 2837-2856 ◽  
Author(s):  
Peter Pelikán ◽  
Marek Liška

The CNDO method for transition metals in the UHF version has been used to study the equilibrium of configuration isomers of tetrahedral and square-planar tetrafluoro and tetrabromo complexes of the first transition row atoms in the oxidation degree II (Mn(II), Fe(II), Co(II), Ni(II), Cu(II) both in low-spin and in high-spin states. The results show that the ability (given by electronic structure of the central atom) to form the square-planar complexes decreases monotonously in the series: Mn(II) > Fe(II) > Co(II) > Ni(II) > Cu(II). With respect to the effect of the electronic structure of ligands, the same ability decreases in the series: F- > Cl- > Br-.


Author(s):  
R.W. Carpenter

Interest in precipitation processes in silicon appears to be centered on transition metals (for intrinsic and extrinsic gettering), and oxygen and carbon in thermally aged materials, and on oxygen, carbon, and nitrogen in ion implanted materials to form buried dielectric layers. A steadily increasing number of applications of microanalysis to these problems are appearing. but still far less than the number of imaging/diffraction investigations. Microanalysis applications appear to be paced by instrumentation development. The precipitation reaction products are small and the presence of carbon is often an important consideration. Small high current probes are important and cryogenic specimen holders are required for consistent suppression of contamination buildup on specimen areas of interest. Focussed probes useful for microanalysis should be in the range of 0.1 to 1nA, and estimates of spatial resolution to be expected for thin foil specimens can be made from the curves shown in Fig. 1.


1971 ◽  
Vol 32 (C1) ◽  
pp. C1-74-C1-75 ◽  
Author(s):  
K. ENDO ◽  
Y. FUJITA ◽  
R. KIMURA ◽  
T. OHOYAMA ◽  
M. TERADA

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