Atomic force microscopy observation of Bi2Sr2CaCu2O8+? thin films prepared by molecular beam epitaxy

1996 ◽  
Vol 105 (5-6) ◽  
pp. 1279-1282 ◽  
Author(s):  
Masato Nose ◽  
Ichiro Tsukada ◽  
Kunimitsu Uchinokura
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Microscopy Observation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Atomic Force Microscopy Observation

Atomic Force Microscopy Studies of Barium Titanate Thin Films Prepared by Laser Molecular Beam Epitaxy

1997 ◽  
Vol 14 (2) ◽  
pp. 134-137 ◽  
Author(s):  
Cui Da-fu ◽  
Lü Hui-bin ◽  
Wang Hui-sheng ◽  
Chen Zheng-hao ◽  
Zhou Yue-liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Molecular Beam Epitaxy ◽  
Barium Titanate ◽  
Molecular Beam ◽  
Force Microscopy ◽  
Laser Molecular Beam Epitaxy ◽  
Atomic Force

scholarly journals Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Yong-Jin Cho ◽  
Alex Summerfield ◽  
Andrew Davies ◽  
Tin S. Cheng ◽  
Emily F. Smith ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Graphite Substrate ◽  
Force Microscopy ◽  
Atomic Force

Abstract We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate.

Growth of Germanium on Porous Silicon (001)

1996 ◽  
Vol 452 ◽  
Author(s):  
W. H. Thompson ◽  
Z. Yamani ◽  
H. M. Nayfeh ◽  
M.-A. Hasan ◽  
J. E. Greene ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Porous Silicon ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Porous Si ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nm Range

AbstractThe surface morphology of Ge grown on Si (001) and porous Si(001) by molecular beam epitaxy at 380 °C is examined using atomic force microscopy (AFM). For layer thicknesses of 30 nm, the surface shows islanding while still maintaining some of the underlying roughness of the surface of porous Si. For thicknesses in the 100 nm range, the surface roughness is not visible, but the islanding persists. Unlike the case of silicon where islands tend to merge and nearly disappear as the thickness of the deposited layer rises, we observe on the porous layer the persistence of the islands with no merging even for macroscopic thicknesses as large as 0.73 microns.

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