Correction for exchange and correlation effects in multielectron system theory

1991 ◽  
Vol 31 (4) ◽  
pp. 529-532 ◽  
Author(s):  
A. V. Glushkov
Keyword(s):  
System Theory ◽  
Correlation Effects ◽  
Multielectron System ◽  
Exchange And Correlation

Exchange and correlation effects in strained-layer semiconductor quantum wells

2004 ◽  
Vol 241 (5) ◽  
pp. 1046-1052
Author(s):  
C. Tong ◽  
M. R. Kim ◽  
S. K. Kim ◽  
B. H. Han ◽  
J. K. Rhee
Keyword(s):  
Quantum Wells ◽  
Correlation Effects ◽  
Strained Layer ◽  
Semiconductor Quantum Wells ◽  
Exchange And Correlation

Exchange and correlation effects in a semiconductor quantum-well wire

1995 ◽  
Vol 17 (1) ◽  
pp. 85-90 ◽  
Author(s):  
Vera Beatriz Campos ◽  
Marcos H. Degani ◽  
Oscar Hipólito
Keyword(s):  
Quantum Well ◽  
Correlation Effects ◽  
Quantum Well Wire ◽  
Semiconductor Quantum Well ◽  
Exchange And Correlation

EFFECT OF MOTT TRANSITION WITH DIFFERENT DIELECTRIC FUNCTIONS IN LOW-DIMENSIONAL SEMICONDUCTOR SYSTEMS

2008 ◽  
Vol 22 (08) ◽  
pp. 611-620
Author(s):  
A. JOHN PETER
Keyword(s):  
Critical Concentration ◽  
Mott Transition ◽  
Correlation Effects ◽  
Metal Insulator ◽  
Hartree Fock ◽  
Mass Approximation ◽  
A Value ◽  
The One ◽  
Low Dimensional ◽  
Exchange And Correlation

Ionization energies of a GaAs/Ga 1-x Al x As superlattice system with finite and infinite barriers are investigated with different dielectric screening functions within the effective mass approximation. Within the one-electron approximation the occurrence of Mott transition is seen when the binding energy of a donor vanishes. While the Thomas–Fermi screening function does not admit the Mott transition below a well-width around 60 Å,1,2 the Hartree–Fock screening function with exchange and correlation effects included pushes the critical well-width to a value around 20 Å. The Lindhard screening function also gives the same results. The effects of Anderson localization and exchange and correlation in the Hubbard model are included in our model. It is found that the ionization energy (i) decreases as well-width increases, (ii) decreases when well-width increases and (iii) the critical concentration at which the metal-insulator transition occurs is lowered when well dimensions are reduced. All the calculations have been carried out with finite and infinite barriers and the results are compared with available data in the literature.

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