Vapor-phase combustion and heat and mass transfer during interaction between a high-temperature gas flow and a solid

1989 ◽  
Vol 24 (4) ◽  
pp. 447-455
Author(s):  
V. N. Pushkin ◽  
G. S. Sukhov ◽  
L. P. Yarin
Keyword(s):  
Mass Transfer ◽  
High Temperature ◽  
Heat And Mass Transfer ◽  
Vapor Phase ◽  
Gas Flow ◽  
High Temperature Gas

scholarly journals Conjugate model for heat and mass transfer of porous wall in the high temperature gas flow

2001 ◽  
Vol 17 (3) ◽  
pp. 245-250 ◽  
Author(s):  
A. F. Polyakov ◽  
D. L. Reviznikov ◽  
Shen Qing ◽  
Tang Jinrong ◽  
Wei Shuru
Keyword(s):  
Mass Transfer ◽  
High Temperature ◽  
Heat And Mass Transfer ◽  
Gas Flow ◽  
Porous Wall ◽  
Conjugate Model ◽  
High Temperature Gas

DISPERSED PHASE VELOCITY IN A HIGH-TEMPERATURE GAS FLOW

2019 ◽  
Vol 23 (4) ◽  
pp. 319-328
Author(s):  
Dmitry V. Nesterovich ◽  
Oleg G. Penyazkov ◽  
Yu. A. Stankevich ◽  
M. S. Tretyak ◽  
Vladimir V. Chuprasov ◽  
...  
Keyword(s):  
High Temperature ◽  
Phase Velocity ◽  
Gas Flow ◽  
Dispersed Phase ◽  
High Temperature Gas

Comparative Study of GaN Growth Process by MOVPE

1999 ◽  
Vol 572 ◽  
Author(s):  
Jingxi Sun ◽  
J. M. Redwing ◽  
T. F. Kuech
Keyword(s):  
High Temperature ◽  
Comparative Study ◽  
Gas Phase ◽  
Residence Time ◽  
Gas Flow ◽  
Flow Sheet ◽  
Flow Zone ◽  
High Quality ◽  
Phase Temperature ◽  
High Temperature Gas

ABSTRACTA comparative study of two different MOVPE reactors used for GaN growth is presented. Computational fluid dynamics (CFD) was used to determine common gas phase and fluid flow behaviors within these reactors. This paper focuses on the common thermal fluid features of these two MOVPE reactors with different geometries and operating pressures that can grow device-quality GaN-based materials. Our study clearly shows that several growth conditions must be achieved in order to grow high quality GaN materials. The high-temperature gas flow zone must be limited to a very thin flow sheet above the susceptor, while the bulk gas phase temperature must be very low to prevent extensive pre-deposition reactions. These conditions lead to higher growth rates and improved material quality. A certain range of gas flow velocity inside the high-temperature gas flow zone is also required in order to minimize the residence time and improve the growth uniformity. These conditions can be achieved by the use of either a novel reactor structure such as a two-flow approach or by specific flow conditions. The quantitative ranges of flow velocities, gas phase temperature, and residence time required in these reactors to achieve high quality material and uniform growth are given.

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