Irreversible change of surface impedance of high-T c thin films due to D.C. magnetic field commutation

1995 ◽  
Vol 8 (1) ◽  
pp. 121-123
Author(s):  
A. Ya. Basovich ◽  
R. K. Belov ◽  
V. A. Markelov ◽  
V. V. Talanov
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Surface Impedance ◽  
Irreversible Change

Nonlinear surface impedance of Tl2Ba2CaCu2O8 thin films as a function of temperature, frequency, and magnetic field

2003 ◽  
Vol 93 (7) ◽  
pp. 4049-4054 ◽  
Author(s):  
E. Gaganidze ◽  
R. Heidinger ◽  
J. Halbritter ◽  
A. Shevchun ◽  
M. Trunin ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Surface Impedance ◽  
Nonlinear Surface ◽  
Nonlinear Surface Impedance

Electrical Anisotropy of Thin Metal Films Growing on Dielectric Substrates

2002 ◽  
Vol 7 (2) ◽  
pp. 45-52
Author(s):  
L. Jakučionis ◽  
V. Kleiza
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Uniaxial Anisotropy ◽  
Metal Films ◽  
Thin Layers ◽  
Electrical Anisotropy ◽  
Electrical Field ◽  
Dielectric Substrates ◽  
Unequal Probability ◽  
Conductive Thin Films

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.

scholarly journals Effects of Perpendicular Magnetic Field Annealing on the Structural and Magnetic Properties of [Co/Ni]2/PtMn Thin Films

2021 ◽  
Vol 7 (3) ◽  
pp. 38
Author(s):  
Roshni Yadav ◽  
Chun-Hsien Wu ◽  
I-Fen Huang ◽  
Xu Li ◽  
Te-Ho Wu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetic Properties ◽  
Photoelectron Spectroscopy ◽  
Perpendicular Magnetic Field ◽  
Face Centered Cubic ◽  
Lattice Image ◽  
X Ray ◽  
Field Annealing ◽  
Face Centered

In this study, [Co/Ni]2/PtMn thin films with different PtMn thicknesses (2.7 to 32.4 nm) were prepared on Si/SiO2 substrates. The post-deposition perpendicular magnetic field annealing (MFA) processes were carried out to modify the structures and magnetic properties. The MFA process also induced strong interlayer diffusion, rendering a less sharp interface between Co and Ni and PtMn layers. The transmission electron microscopy (TEM) lattice image analysis has shown that the films consisted of face-centered tetragonal (fct) PtMn (ordered by MFA), body-centered cubic (bcc) NiMn (due to intermixing), in addition to face-centered cubic (fcc) Co, Ni, and PtMn phases. The peak shift (2-theta from 39.9° to 40.3°) in X-ray diffraction spectra also confirmed the structural transition from fcc PtMn to fct PtMn after MFA, in agreement with those obtained by lattice images in TEM. The interdiffusion induced by MFA was also evidenced by the depth profile of X-ray photoelectron spectroscopy (XPS). Further, the magnetic properties measured by vibrating sample magnetometry (VSM) have shown an increased coercivity in MFA-treated samples. This is attributed to the presence of ordered fct PtMn, and NiMn phases exchange coupled to the ferromagnetic [Co/Ni]2 layers. The vertical shift (Mshift = −0.03 memu) of the hysteresis loops is ascribed to the pinned spins resulting from perpendicular MFA processes.

The influence of pressure and magnetic field on the deposition of epitaxial TiBx thin films from DC magnetron sputtering

Vacuum ◽  
2020 ◽  
Vol 177 ◽  
pp. 109355
Author(s):  
Nils Nedfors ◽  
Daniel Primetzhofer ◽  
Igor Zhirkov ◽  
Justinas Palisaitis ◽  
Per O.Å. Persson ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering

Low temperature micro-Raman measurements under magnetic field of thin films

2007 ◽  
Vol 310 (2) ◽  
pp. 2164-2166 ◽  
Author(s):  
A. Antonakos ◽  
D. Lampakis ◽  
D. Palles ◽  
E. Liarokapis ◽  
W. Prellier ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Low Temperature

scholarly journals The surface impedance of superconductors and normal metals at high frequencies III. The relation between impedance and superconducting penetration depth

1947 ◽  
Vol 191 (1026) ◽  
pp. 399-415 ◽  
Keyword(s):  
Magnetic Field ◽  
Penetration Depth ◽  
Surface Impedance ◽  
Simple Extension ◽  
High Frequencies ◽  
Resistivity Measurements ◽  
Direct Measurements ◽  
Normal Metals ◽  
Velocity Of Propagation ◽  
Theory Of Superconductivity

The theory developed in II is extended to cover the case of a superconductor, and a formula is derived relating the r. f. resistivity to the superconducting penetration depth and other parameters of the metal. It is shown how the penetration depth may be deduced directly from measurements of the skin reactance, and a method of measuring reactance is described, based essentially on the variation of the velocity of propagation along a transmission line due to the reactance of the conductors. For technical reasons it is not convenient to measure the reactance absolutely, but a simple extension of the technique described in I enables the change in reactance to be accurately measured when superconductivity is destroyed by a magnetic field. The method has been applied to mercury and tin. In the former case the results are in agreement with Shoenberg’s direct measurements, and confirm that the penetration depth at 0° K is of the order of 7 x 10 –6 cm. The theory developed at the beginning of the paper is used to deduce the variation of penetration depth with temperature from the resistivity measurements of I, and it is shown that agreement with other determinations and with the reactance measurements is fairly good, but not perfect. Some of the assumptions used in developing the theory are critically discussed, and a qualitative account is given to show how Heisenberg’s theory of superconductivity offers an explanation of some of the salient features of superconductivity and inparticular indicates the relation between superconducting and normal electrons.

MAGNETIC RESISTIVITY IN Bi2Sr2Ca(Cu1-xCox)2Od EPITAXIAL THIN FILMS

2007 ◽  
Vol 21 (01) ◽  
pp. 127-132
Author(s):  
T. R. YANG ◽  
G. ILONCA ◽  
V. TOMA ◽  
P. BALINT ◽  
M. BODEA
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Activation Energy ◽  
Glass Transition ◽  
Effective Activation Energy ◽  
Epitaxial Thin Films ◽  
Effective Activation ◽  
High Quality ◽  
Plastic Deformations ◽  
Magnetic Resistivity

The scaling behavior of the effective activation energy of high-quality epitaxial c-oriented Bi 2 Sr 2 Ca ( Cu 1-x Co x)2 O d thin films with 0≤x ≤0.025 has been studied as a function of temperature and magnetic field. For all samples, the effective activation energy scales as U(T, μoH)=Uo(1-T/T c )mHn with exponent m=1.25±0.03, n=-1/2 and the field scaling 1/μoH and -UμoH for thick films and ultra thin films, respectively. The results are discussed taking into account of the influence of the Co substitution with a model in which U(T, H) arises from plastic deformations of the viscous flux liquid above the vortex-glass transition temperature.

Magnetism of CoFe2O4 thin films annealed under the magnetic field

2015 ◽  
Vol 394 ◽  
pp. 287-291 ◽  
Author(s):  
Y.Q. Dai ◽  
J.M. Dai ◽  
X.W. Tang ◽  
Z.F. Zi ◽  
K.J. Zhang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
The Magnetic Field
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