Residual conductance at atmospheric pressure in electroformed thin gold films

1992 ◽  
Vol 11 (18) ◽  
pp. 1240-1242 ◽  
Author(s):  
M. I. Newton ◽  
G. McHale
Keyword(s):  
Atmospheric Pressure ◽  
Gold Films ◽  
Residual Conductance

Temperature Dependence of the Electrical Resistivity in Nanocrystalline Gold Films Made by Advanced GaS Deposition

1999 ◽  
Vol 581 ◽  
Author(s):  
J. Ederth ◽  
L. B. Kiss ◽  
G. A. Niklasson ◽  
C. G. Granqvist ◽  
E. Olsson
Keyword(s):  
Grain Size ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Atmospheric Pressure ◽  
Nanocrystalline Materials ◽  
Phonon Scattering ◽  
Sudden Change ◽  
Gold Films ◽  
Temperature Coefficient Of Resistivity ◽  
Electron Phonon Scattering

ABSTRACTNanocrystalline thin Au films with grain size 10 - 76 nm have been analyzed regarding the temperature dependence of the electrical resistivity. A sudden change in the power function, ρ α Tn, was found at ∼10 K, where n = 1.7 in the range 5 - 10 K and n = 3.3 in the range 10 - 15 K. This effect disappears after annealing at 773 K for 0.5 h in air at atmospheric pressure. After the annealing the grain size was ∼ 100 nm. This is an indication of interference between electron-phonon scattering and electron-grain boundary scattering in nanocrystalline materials at low temperatures.The temperature coefficient of resistivity, TCR, increased with increasing grain size at any temperature and the position of the maximum TCR was shifted towards lower temperatures with increasing grain size.

scholarly journals Room-temperature, atmospheric-pressure microsputtering of dense, electrically conductive, sub-100 nm gold films

2019 ◽  
Vol 30 (28) ◽  
pp. 285602 ◽  
Author(s):  
Y S Kornbluth ◽  
R H Mathews ◽  
L Parameswaran ◽  
L M Racz ◽  
L F Velásquez-García
Keyword(s):  
Atmospheric Pressure ◽  
Room Temperature ◽  
Gold Films ◽  
Electrically Conductive

A High-Voltage Terminal for a Field-Emission Gun

1972 ◽  
Vol 30 ◽  
pp. 428-429
Author(s):  
N. F. Ziegler
Keyword(s):  
Field Emission ◽  
High Voltage ◽  
Atmospheric Pressure ◽  
Power Supplies ◽  
High Coherence

A high-voltage terminal has been constructed for housing the various power supplies and metering circuits required by the field-emission gun (described elsewhere in these Proceedings) for the high-coherence microscope. The terminal is cylindrical in shape having a diameter of 14 inches and a length of 24 inches. It is completely enclosed by an aluminum housing filled with Freon-12 gas at essentially atmospheric pressure. The potential of the terminal relative to ground is, of course, equal to the accelerating potential of the microscope, which in the present case, is 150 kilovolts maximum.

Relative Intensities in ED Patterns From Thin Gold Films

1972 ◽  
Vol 30 ◽  
pp. 636-637
Author(s):  
R. H. Morriss ◽  
J. D. C. Peng ◽  
C. D. Melvin
Keyword(s):  
Theoretical Calculations ◽  
Diffraction Theory ◽  
Gold Films ◽  
Reasonable Accuracy ◽  
Experimental Conditions ◽  
Crystal Perfection ◽  
Heavy Atoms ◽  
Fine Focus ◽  
Convergent Beam ◽  
Beam Diffraction

Although dynamical diffraction theory was modified for electrons by Bethe in 1928, relatively few calculations have been carried out because of computational difficulties. Even fewer attempts have been made to correlate experimental data with theoretical calculations. The experimental conditions are indeed stringent - not only is a knowledge of crystal perfection, morphology, and orientation necessary, but other factors such as specimen contamination are important and must be carefully controlled. The experimental method of fine-focus convergent-beam electron diffraction has been successfully applied by Goodman and Lehmpfuhl to single crystals of MgO containing light atoms and more recently by Lynch to single crystalline (111) gold films which contain heavy atoms. In both experiments intensity distributions were calculated using the multislice method of n-beam diffraction theory. In order to obtain reasonable accuracy Lynch found it necessary to include 139 beams in the calculations for gold with all but 43 corresponding to beams out of the [111] zone.

“Preparation of Single Crystalline Gold Films for ED Studies”

1972 ◽  
Vol 30 ◽  
pp. 634-635
Author(s):  
Joseph D. C. Peng
Keyword(s):  
Crystal Morphology ◽  
Diffraction Theory ◽  
Scattering Matrix ◽  
Vacuum Evaporation ◽  
Gold Films ◽  
Matrix Formulation ◽  
Silver Films ◽  
Single Crystalline ◽  
Grating Pattern ◽  
Stacking Disorder

The relative intensities of the ED spots in a cross-grating pattern can be calculated using N-beam electron diffraction theory. The scattering matrix formulation of N-beam ED theory has been previously applied to imperfect microcrystals of gold containing stacking disorder (coherent twinning) in the (111) crystal plane. In the present experiment an effort has been made to grow single-crystalline, defect-free (111) gold films of a uniform and accurately know thickness using vacuum evaporation techniques. These represent stringent conditions to be met experimentally; however, if a meaningful comparison is to be made between theory and experiment, these factors must be carefully controlled. It is well-known that crystal morphology, perfection, and orientation each have pronounced effects on relative intensities in single crystals.The double evaporation method first suggested by Pashley was employed with some modifications. Oriented silver films of a thickness of about 1500Å were first grown by vacuum evaporation on freshly cleaved mica, with the substrate temperature at 285° C during evaporation with the deposition rate at 500-800Å/sec.

Hole Formation in Gold Films

1972 ◽  
Vol 30 ◽  
pp. 510-511
Author(s):  
R. W. Vook ◽  
R. Cook ◽  
R. Ziemer
Keyword(s):  
Deposition Rate ◽  
Quartz Crystal ◽  
Evaporation Rate ◽  
Gold Films ◽  
Hole Density ◽  
Hole Formation ◽  
Microscope Slide ◽  
Crystal Film ◽  
Glass Microscope Slide ◽  
Glass Microscope

During recent experiments on Au films, a qualitative correlation between hole formation and deposition rate was observed. These early studies were concerned with films 80 to 1000A thick deposited on glass at -185°C and annealed at 170°C. In the present studies this earlier work was made quantitative. Deposition rates varying between 5 and 700 A/min were used. The effects of deposition rate on hole density for two films 300 and 700A thick were investigated.Au was evaporated from an outgassed W filament located 10 cm from a glass microscope slide substrate and a quartz crystal film thickness monitor. A shutter separating the filament from the substrate and monitor made it possible to obtain a constant evaporation rate before initiating deposition. The pressure was reduced to less than 1 x 10-6 torr prior to cooling the substrate with liquid nitrogen. The substrate was cooled in 15 minutes during which the pressure continued to drop to the mid 10-7 torr range, where deposition was begun.

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Microstructure and reactivity of small metal particles: The role of Ce additives

1992 ◽  
Vol 50 (1) ◽  
pp. 318-319
Author(s):  
L.D. Schmidt ◽  
K. R. Krause ◽  
J. M. Schwartz ◽  
X. Chu
Keyword(s):  
Atmospheric Pressure ◽  
Noble Metals ◽  
Mixed Oxides ◽  
Catalytic Properties ◽  
Chemical Shifts ◽  
Catalytic Converter ◽  
Structural Evolution ◽  
Single Particles ◽  
Small Metal Particles

The evolution of microstructures of 10- to 100-Å diameter particles of Rh and Pt on SiO2 and Al2O3 following treatment in reducing, oxidizing, and reacting conditions have been characterized by TEM. We are able to transfer particles repeatedly between microscope and a reactor furnace so that the structural evolution of single particles can be examined following treatments in gases at atmospheric pressure. We are especially interested in the role of Ce additives on noble metals such as Pt and Rh. These systems are crucial in the automotive catalytic converter, and rare earths can significantly modify catalytic properties in many reactions. In particular, we are concerned with the oxidation state of Ce and its role in formation of mixed oxides with metals or with the support. For this we employ EELS in TEM, a technique uniquely suited to detect chemical shifts with ∼30Å resolution.

High-resolution microscopy of twin boundaries in gold

1987 ◽  
Vol 45 ◽  
pp. 260-261
Author(s):  
William Krakow ◽  
David A. Smith
Keyword(s):  
High Resolution ◽  
Specimen Preparation ◽  
Gold Films ◽  
Boundary Area ◽  
Transmission Electron ◽  
Recent Developments ◽  
Tilt Boundaries ◽  
High Resolution Microscopy ◽  
Twist Boundaries

Recent developments in specimen preparation, imaging and image analysis together permit the experimental determination of the atomic structure of certain, simple grain boundaries in metals such as gold. Single crystal, ∼125Å thick, (110) oriented gold films are vapor deposited onto ∼3000Å of epitaxial silver on (110) oriented cut and polished rock salt substrates. Bicrystal gold films are then made by first removing the silver coated substrate and placing in contact two suitably misoriented pieces of the gold film on a gold grid. Controlled heating in a hot stage first produces twist boundaries which then migrate, so reducing the grain boundary area, to give mixed boundaries and finally tilt boundaries perpendicular to the foil. These specimens are well suited to investigation by high resolution transmission electron microscopy.

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