Chemical vapour deposition of TiN layers in various glow discharge regions

1991 ◽  
Vol 10 (9) ◽  
pp. 506-508 ◽  
Author(s):  
J. Michalski ◽  
T. Wierzchoń
Keyword(s):  
Glow Discharge ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour

The influence of unsteady state plasma on the properties of a-Si:H films formed by glow discharge-chemical vapour deposition

1989 ◽  
Vol 177 (1-2) ◽  
pp. 161-170 ◽  
Author(s):  
K Hamamoto ◽  
H Ozaki ◽  
K Nakatani ◽  
M Yano ◽  
K Suzuki ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Unsteady State ◽  
State Plasma

Synthesis of carbon nanowalls on macroporous nickel foam by atmospheric glow discharge chemical vapour deposition

2014 ◽  
Vol 251 (5) ◽  
pp. 933-936 ◽  
Author(s):  
Marcel Meško ◽  
Viliam Vretenár ◽  
Peter Kotrusz ◽  
Martin Hulman ◽  
Viera Skákalová
Keyword(s):  
Glow Discharge ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Nickel Foam ◽  
Chemical Vapour ◽  
Carbon Nanowalls

Direct-current hollow-cathode glow-discharge plasma-enhanced-chemical-vapour-deposition technique for a-Si:H thin-film production

1985 ◽  
Vol 63 (6) ◽  
pp. 826-830 ◽  
Author(s):  
S. Matsumura ◽  
K. Sakurai ◽  
A. A. Berezin ◽  
R. M. Hobson ◽  
S. Teii ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Deposition Rate ◽  
Chemical Vapour Deposition ◽  
Direct Current ◽  
Hollow Cathode ◽  
Vapour Deposition ◽  
Discharge Plasma ◽  
Chemical Vapour ◽  
Glow Discharge Plasma ◽  
Rf Discharge

The direct-current hollow-cathode glow-discharge plasma-enhanced-chemical-vapour-deposition (PCVD) technique has been developed for the production of a-Si:H thin films. The electric conductivity, deposition rate, and optical characteristics of films produced by this method are similar to those of films produced by the conventional RF-discharge PCVD method. However, the properties of the former can be easily controlled by the discharge current without external substrate heating. The power consumption per deposition rate is much smaller than the microwave methods; but similar to that which is characteristic of RF-discharge methods.

Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactor

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-395-Pr8-402 ◽  
Author(s):  
B. Armas ◽  
M. de Icaza Herrera ◽  
C. Combescure ◽  
F. Sibieude ◽  
D. Thenegal
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Cold Wall ◽  
Pressure Chemical ◽  
Mullite Coatings
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