Measuring surface roughness of an optical thin film with scanning tunneling microscopes

1990 ◽  
Vol 9 (10) ◽  
pp. 1194-1194 ◽  
Author(s):  
K. Habib ◽  
V. Eling ◽  
C. Wu
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Scanning Tunneling ◽  
Optical Thin Film ◽  
Measuring Surface ◽  
Scanning Tunneling Microscopes

scholarly journals Structure and morphology of nano-sized W-Ti/Si thin films

2006 ◽  
Vol 71 (8-9) ◽  
pp. 969-976 ◽  
Author(s):  
Suzana Petrovic ◽  
Borivoje Adnadjevic ◽  
Davor Perusko ◽  
Nada Popovic ◽  
Nenad Bundaleski ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Grain Size ◽  
Phase Composition ◽  
Surface Segregation ◽  
Morphological Characteristics ◽  
Film Surface ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Thin films were deposited by d.c. sputtering onto a silicon substrate. The influence of the W-Ti thin film thickness to its structural and morphological characteristics of a nano-scale were studied. The phase composition and grain size were studied by X-ray diffraction (XRD), while the surface morphology and surface roughness were determined by scanning tunneling microscopy (STM). The analysis of the phase composition show that the thin films had a polycrystalline structure - they were composed of a b.c.c. W phase with the presence of a h.c.p. Ti phase. The XRD peak in the scattering angle interval of 38?-43? was interpreted as an overlap of peaks corresponding to the W(110) and Ti(101) planes. The grain size and the mean surface roughness both increase with the thikness of the thin film. The chemical composition of the thin film surface was also analyzed by low energy ions scattering (LEIS). The results show the surface segregation of titanium, as well as a substantial presence of oxygen an the surface.

Roughness measurements of nonlinear optical polymer films by scanning tunneling microscopy

1989 ◽  
Vol 47 ◽  
pp. 22-23
Author(s):  
I. H. Musselman ◽  
R.-T. Chen ◽  
P. E. Russell
Keyword(s):  
Surface Roughness ◽  
Scanning Tunneling Microscopy ◽  
Nonlinear Optical ◽  
Polymer Surface ◽  
Light Extinction ◽  
Scanning Tunneling ◽  
Silicon Substrates ◽  
Tunneling Microscopy ◽  
Optical Polymer ◽  
Total Light

Scanning tunneling microscopy (STM) has been used to characterize the surface roughness of nonlinear optical (NLO) polymers. A review of STM of polymer surfaces is included in this volume. The NLO polymers are instrumental in the development of electrooptical waveguide devices, the most fundamental of which is the modulator. The most common modulator design is the Mach Zehnder interferometer, in which the input light is split into two legs and then recombined into a common output within the two dimensional waveguide. A π phase retardation, resulting in total light extinction at the output of the interferometer, can be achieved by changing the refractive index of one leg with respect to the other using the electrooptic effect. For best device performance, it is essential that the NLO polymer exhibit minimal surface roughness in order to reduce light scattering. Scanning tunneling microscopy, with its high lateral and vertical resolution, is capable of quantifying the NLO polymer surface roughness induced by processing. Results are presented below in which STM was used to measure the surface roughness of films produced by spin-coating NLO-active polymers onto silicon substrates.

Influence of ion beam parameters onto two-dimensional optical thin film thickness distributions deposited by ion beam sputtering

2019 ◽  
Vol 682 ◽  
pp. 109-120 ◽  
Author(s):  
Wjatscheslaw Sakiew ◽  
Stefan Schrameyer ◽  
Marco Jupé ◽  
Philippe Schwerdtner ◽  
Nick Erhart ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Ion Beam ◽  
Two Dimensional ◽  
Ion Beam Sputtering ◽  
Thin Film Thickness ◽  
Optical Thin Film ◽  
Beam Sputtering ◽  
Beam Parameters

Phenethylammonium bismuth halides: from single crystals to bulky-organic cation promoted thin-film deposition for potential optoelectronic applications

2019 ◽  
Vol 7 (36) ◽  
pp. 20733-20741 ◽  
Author(s):  
Mehri Ghasemi ◽  
Miaoqiang Lyu ◽  
Md Roknuzzaman ◽  
Jung-Ho Yun ◽  
Mengmeng Hao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Single Crystals ◽  
Organic Cation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optoelectronic Applications ◽  
Excellent Stability

The phenethylammonium cation significantly promotes the formation of fully-covered thin-films of hybrid bismuth organohalides with low surface roughness and excellent stability.

Ge-Quantum Dots on SI(001) Tailored by Carbon Predeposition

1998 ◽  
Vol 533 ◽  
Author(s):  
O. Leifeld ◽  
D. Grützmacher ◽  
B. Müller ◽  
K. Kern
Keyword(s):  
Surface Roughness ◽  
Critical Thickness ◽  
Carbon Deposition ◽  
Compressive Strain ◽  
Second Step ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Island Nucleation ◽  
Facet Formation

AbstractThe morphology of Si(001) after carbon deposition of 0.05 to 0.11 monolayers (ML) was investigated in situ by ultrahigh vacuum scanning tunneling microscopy (UHV-STM). The carbon induces a c(4×4)-reconstruction of the surface. In addition, carbon increases the surface roughness compared to clean Si(001) (2×1). In a second step, the influence of the carbon induced restructuring on Ge-island nucleation was investigated. The 3D-growth sets in at considerably lower Ge coverage compared to the clean Si(001) (2×1) surface. This leads to a high density of small though irregularly shaped dots, consisting of stepped terraces, already at 2.5 ML Ge. Increasing the Ge-coverage beyond the critical thickness for facet formation, the dots show { 105 }- facets well known from Ge-clusters on bare Si(001) (2×1). However, they are flat on top with a (001)-facet showing the typical buckled Ge rows and missing dimers. This indicates that the compressive strain is not fully relaxed in these hut clusters.

Nanoscale Study of the Hydrogenated Amorphous Silicon Surface

1994 ◽  
Vol 336 ◽  
Author(s):  
D.M. Tanenbaum ◽  
A. Laracuente ◽  
A.C. Gallagher
Keyword(s):  
Surface Roughness ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Rf Discharge ◽  
Scanning Tunneling ◽  
Growth Stages ◽  
Crystal Silicon ◽  
Air Exposure ◽  
Atomically Flat ◽  
Hydrogenated Amorphous

ABSTRACTA scanning tunneling microscope has been used to study the topology of the surface of device-quality, hydrogenated Amorphous silicon deposited by rf discharge from silane or “hot wire” CVD. The substrates were oxide-free single-crystal silicon or GaAs. Films studied were either grown in our laboratory and observed with no air exposure, or grown at other laboratories producing device-quality photovoltaic cells and viewed after air exposures of less than 30 Minutes. Thin films (10 nm) representing early growth stages appear significantly smoother than the thicker films. The topology of thick films (> 50 nm) has large variations over individual samples. While many regions can be characterized as “rolling hills”, atomically flat areas are sometimes observed nearby in our films. In most regions the observed slopes were 10% or less from the horizontal, but some steep-sided valleys, indicating incipient voids, are seen. Overall surface roughness measured on sub-Micron areas of our films is very inhomogeneous. Uniformity of the films grown off site was much better, although no atomically flat regions were observed, surface roughness can be estimated.

Modeling and analysis of birefringence in magneto-optical thin film made by SiO2/ZrO2 doped with ferrite of cobalt

2010 ◽  
Vol 99 (3) ◽  
pp. 553-558 ◽  
Author(s):  
A. Hocini ◽  
T. Boumaza ◽  
M. Bouchemat ◽  
F. Choueikani ◽  
F. Royer ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Thin Film ◽  
Modeling And Analysis
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