Chemomechanical effect in ion-implanted magnesium oxide

1985 ◽  
Vol 4 (11) ◽  
pp. 1364-1370 ◽  
Author(s):  
P. J. Burnett ◽  
T. F. Page
Keyword(s):  
Magnesium Oxide ◽  
Chemomechanical Effect ◽  
Ion Implanted

Thermal fatigue of ion implanted magnesium oxide crystals

1999 ◽  
Vol 148 (1-4) ◽  
pp. 773-777
Author(s):  
V.N Gurarie ◽  
D.N Jamieson ◽  
A.V Orlov ◽  
J.S Williams ◽  
M Conway
Keyword(s):  
Magnesium Oxide ◽  
Thermal Fatigue ◽  
Oxide Crystals ◽  
Ion Implanted

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Observations of the Thermal Decomposition of Brucite

1968 ◽  
Vol 26 ◽  
pp. 446-447
Author(s):  
P. L. Burnett ◽  
W. R. Mitchell ◽  
C. L. Houck
Keyword(s):  
Thermal Decomposition ◽  
Magnesium Oxide ◽  
Basal Plane ◽  
Magnesium Ions ◽  
A Value ◽  
Reaction Proceeds

Natural Brucite (Mg(OH)2) decomposes on heating to form magnesium oxide (MgO) having its cubic ﹛110﹜ and ﹛111﹜ planes respectively parallel to the prism and basal planes of the hexagonal brucite lattice. Although the crystal-lographic relation between the parent brucite crystal and the resulting mag-nesium oxide crystallites is well known, the exact mechanism by which the reaction proceeds is still a matter of controversy. Goodman described the decomposition as an initial shrinkage in the brucite basal plane allowing magnesium ions to shift their original sites to the required magnesium oxide positions followed by a collapse of the planes along the original <0001> direction of the brucite crystal. He noted that the (110) diffraction spots of brucite immediately shifted to the positions required for the (220) reflections of magnesium oxide. Gordon observed separate diffraction spots for the (110) brucite and (220) magnesium oxide planes. The positions of the (110) and (100) brucite never changed but only diminished in intensity while the (220) planes of magnesium shifted from a value larger than the listed ASTM d spacing to the predicted value as the decomposition progressed.

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

A technique to prepare cross-sectional TEM specimens of semiconducting devices

1986 ◽  
Vol 44 ◽  
pp. 742-743
Author(s):  
A. K. Rai ◽  
P. P. Pronko
Keyword(s):  
Thin Films ◽  
Surface Region ◽  
Sample Surface ◽  
Specific Region ◽  
Cross Sectional ◽  
Thin Sections ◽  
The Past ◽  
Device Structures ◽  
Ion Implanted

Several techniques have been reported in the past to prepare cross(x)-sectional TEM specimen. These methods are applicable when the sample surface is uniform. Examples of samples having uniform surfaces are ion implanted samples, thin films deposited on substrates and epilayers grown on substrates. Once device structures are fabricated on the surfaces of appropriate materials these surfaces will no longer remain uniform. For samples with uniform surfaces it does not matter which part of the surface region remains in the thin sections of the x-sectional TEM specimen since it is similar everywhere. However, in order to study a specific region of a device employing x-sectional TEM, one has to make sure that the desired region is thinned. In the present work a simple way to obtain thin sections of desired device region is described.

Preparation of Backthinned Ceramic Specimens

1985 ◽  
Vol 43 ◽  
pp. 182-183
Author(s):  
A. T. Fisher ◽  
P. Angelini
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Vacuum System ◽  
Back Surface ◽  
Surface Microstructure ◽  
Ion Milling ◽  
Near Surface ◽  
Depth Profiles ◽  
Analytical Electron ◽  
Ion Implanted

Analytical electron microscopy (AEM) of the near surface microstructure of ion implanted ceramics can provide much information about these materials. Backthinning of specimens results in relatively large thin areas for analysis of precipitates, voids, dislocations, depth profiles of implanted species and other features. One of the most critical stages in the backthinning process is the ion milling procedure. Material sputtered during ion milling can redeposit on the back surface thereby contaminating the specimen with impurities such as Fe, Cr, Ni, Mo, Si, etc. These impurities may originate from the specimen, specimen platform and clamping plates, vacuum system, and other components. The contamination may take the form of discrete particles or continuous films [Fig. 1] and compromises many of the compositional and microstructural analyses. A method is being developed to protect the implanted surface by coating it with NaCl prior to backthinning. Impurities which deposit on the continuous NaCl film during ion milling are removed by immersing the specimen in water and floating the contaminants from the specimen as the salt dissolves.

Time-resolved high-resolution electron microscopy of structural stability in mgo clusters

1996 ◽  
Vol 54 ◽  
pp. 672-673
Author(s):  
T. Kizuka ◽  
N. Tanaka
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Magnesium Oxide ◽  
Structural Stability ◽  
High Resolution Electron Microscopy ◽  
Video Tape ◽  
Solid State Physics ◽  
Time Resolved ◽  
Resolution Electron ◽  
Structural And Functional Properties

Structure and stability of atomic clusters have been studied by time-resolved high-resolution electron microscopy (TRHREM). Typical examples are observations of structural fluctuation in gold (Au) clusters supported on silicon oxide films, graphtized carbon films and magnesium oxide (MgO) films. All the observations have been performed on the clusters consisted of single metal element. Structural stability of ceramics clusters, such as metal-oxide, metal-nitride and metal-carbide clusters, has not been observed by TRHREM although the clusters show anomalous structural and functional properties concerning to solid state physics and materials science.In the present study, the behavior of ceramic, magnesium oxide (MgO) clusters is for the first time observed by TRHREM at 1/60 s time resolution and at atomic resolution down to 0.2 nm.MgO and gold were subsequently deposited on sodium chloride (001) substrates. The specimens, single crystalline MgO films on which Au particles were dispersed were separated in distilled water and observed by using a 200-kV high-resolution electron microscope (JEOL, JEM2010) equipped with a high sensitive TV camera and a video tape recorder system.

LASER INDUCED ORDERING AND DEFECTS IN ION-IMPLANTED HEXAGONAL SILICON CARBIDE

1980 ◽  
Vol 41 (C4) ◽  
pp. C4-111-C4-112 ◽  
Author(s):  
V. V. Makarov ◽  
T. Tuomi ◽  
K. Naukkarinen ◽  
M. Luomajärvi ◽  
M. Riihonen
Keyword(s):  
Silicon Carbide ◽  
Ion Implanted
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