A combination of laser-induced grating and transient-absorption experiments for investigation of laser pulse properties and fast molecular relaxation processes

1981 ◽  
Vol 26 (1) ◽  
pp. 1-17 ◽  
Author(s):  
A. von Jena
Keyword(s):  
Laser Pulse ◽  
Transient Absorption ◽  
Relaxation Processes ◽  
Molecular Relaxation

Molecular relaxation processes in liquid mixtures containing iodine complexes

1991 ◽  
Vol 48 (2-4) ◽  
pp. 165-182 ◽  
Author(s):  
Marcel Besnard ◽  
Nathelie Del Campo ◽  
Jack Yarwood
Keyword(s):  
Liquid Mixtures ◽  
Relaxation Processes ◽  
Molecular Relaxation ◽  
Iodine Complexes

Competition between electron transfer, trapping, and recombination in CdS nanorod–hydrogenase complexes

2015 ◽  
Vol 17 (8) ◽  
pp. 5538-5542 ◽  
Author(s):  
James K. Utterback ◽  
Molly B. Wilker ◽  
Katherine A. Brown ◽  
Paul W. King ◽  
Joel D. Eaves ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Excited State ◽  
Kinetic Modeling ◽  
Rate Constants ◽  
Transient Absorption ◽  
Relaxation Processes ◽  
Absorption Measurements

Kinetic modeling of transient absorption measurements provides rate constants for the excited state relaxation processes relevant for photochemical H2 generation.

Impurity Redistribution In Ion Implanted Si After Picosecond Nd Laser Pulse Irradiation

1982 ◽  
Vol 13 ◽  
Author(s):  
S.U. Campisano ◽  
P. Baeri ◽  
E. Rimini ◽  
G. Russo ◽  
A.M. Malvezzi
Keyword(s):  
Energy Density ◽  
Laser Pulse ◽  
Sample Surface ◽  
Relaxation Processes ◽  
Impurity Segregation ◽  
Carrier Temperature ◽  
Crystal Transition ◽  
Channeling Effect ◽  
Melt Duration ◽  
Impurity Redistribution

AbstractImpurity redistribution in Bi-implanted Si and in As-implanted Si has been investigated after irradiation with 25 ps Nd(λ=l.06 μm) laser pulse in the energy range 0.1–1.5 J/cm2 . Channeling effect in combination with 2.0 MeV He+ backscattering in glancing detection has been used to characterize the epitaxial crystallization, the impurity location and its depth distribution. The amorphous to single crystal transition occurs at an energy density of about 0.4 J/cm 2 . Bi atoms are located after crystallization in substitutional lattice sites for the in depth part of the distribution. Part of the Bi atoms accumulated at the sample surface and the amount of segregation increases with the pulse energy density and depends on the substrate orientation. A computer model has been also developed to calculate several parameters of interest, as the melt threshold,the melt duration, the carrier temperature etc including a detailed description of the absorption and of the energy relaxation processes. The calculations indicate that the simple thermal description accounts quantitatively for the experimental data on melt duration and impurity segregation.

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