Charge control of the complex formation of phenol with unsaturated compounds containing organoelement substituents from group IV

1995 ◽  
Vol 44 (2) ◽  
pp. 280-286 ◽  
Author(s):  
A. N. Egorochkin ◽  
S. E. Skobeleva ◽  
T. G. Mushtina
Keyword(s):  
Complex Formation ◽  
Group Iv ◽  
Charge Control ◽  
Unsaturated Compounds

Charge control in the formation of complexes of phenol with unsaturated compounds containing organometallic substituents from group IV

1994 ◽  
Vol 43 (6) ◽  
pp. 976-982
Author(s):  
A. N. Egorochkin ◽  
S. E. Skobeleva ◽  
E. T. Bogoradovsky ◽  
T. P. Zubova
Keyword(s):  
Group Iv ◽  
Charge Control ◽  
Unsaturated Compounds ◽  
Formation Of Complexes

Complex formation by a stable radical with various unsaturated compounds

1977 ◽  
Vol 17 (3) ◽  
pp. 407-411
Author(s):  
I. V. Golikov ◽  
R. B. Svitych ◽  
O. P. Yablonskii
Keyword(s):  
Complex Formation ◽  
Stable Radical ◽  
Unsaturated Compounds

Luminescence from individual dislocations in II-VI and III-V semiconductors

1991 ◽  
Vol 49 ◽  
pp. 834-835
Author(s):  
J W Steeds
Keyword(s):  
Group Iv ◽  
Luminescence Properties ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Wide Range ◽  
Basic Physics ◽  
Semiconducting Compounds ◽  
Diamond Group ◽  
Non Destructive ◽  
Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

Sign in / Sign up

Export Citation Format

Share Document