Kinetics of ion-beam mixing at Ti-Si interfaces

1990 ◽  
Vol 1 (2) ◽  
pp. 100-104 ◽  
Author(s):  
I. J. Jabr ◽  
N. S. Saleh ◽  
K. A. Al-Saleh
Keyword(s):  
Ion Beam ◽  
Ion Beam Mixing ◽  
Kinetics Of

Ion Mixing Kinetics of Thin Layered Films in the Fe-Al System

1983 ◽  
Vol 27 ◽  
Author(s):  
J. Grilhe ◽  
J.P. Riviere ◽  
J. Delafond ◽  
C. Jaouen
Keyword(s):  
Composition Range ◽  
Volume Fraction ◽  
Ion Beam ◽  
Mixed Volume ◽  
Low Doses ◽  
Ion Beam Mixing ◽  
Resistivity Measurements ◽  
Semi Empirical ◽  
Kinetics Of

ABSTRACTEvaporated bilayers and multilayers of Fe and Al have been studied during ion beam mixing with Xe ions using in-situ electrical resistivity measurements. Experiments have been performed in the composition range 40 – 58 at.% Al and at both temperatures 77 K and 300 K. A semi-empirical model is proposed to explain the observed kinetics. At low doses, a square root dependence of the mixed volume fraction on dose is found at 77 K but not at 300 K. The results are discussed by comparison with the different models proposed for ion beam mixing.

Optical and magnetic properties of MnBi formed directly by ion beam mixing

1989 ◽  
Vol 4 (5) ◽  
pp. 1151-1155 ◽  
Author(s):  
Yoshiaki Kido ◽  
Masa-aki Tada
Keyword(s):  
Room Temperature ◽  
Metastable Phase ◽  
Ion Beam ◽  
Substrate Surface ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
Ion Beam Mixing ◽  
Protection Effect ◽  
Optical And Magnetic Properties ◽  
Kinetics Of

Multilayers of Mn/Bi were irrradiated with 400 keV Xe+ at temperatures from 80 to 550 K. Ferromagnetic MnBi layers oriented perpendicular to the substrate surface were formed directly at mixing temperatures from room temperature (RT) to 500 K. The measurements of Curie point and optical Faraday rotation revealed that 60–70 at. % of MnBi ion-mixed at RT is the metastable phase (QIITP: quenched high temperature phase). The fraction of QIITP is reduced with increase in mixing temperature. It was also found that ion beam mixing yields a pronounced protection effect against the deterioration of MnBi in a moist atmosphere. A detailed discussion is given on the kinetics of ion beam mixing and the growth mechanism of the metastable MnBi grains.

Kinetics of ion beam mixing of the Te/Se system

1996 ◽  
Vol 157 (2) ◽  
pp. 399-404
Author(s):  
N. S. Saleh ◽  
K. A. Al-Saleh
Keyword(s):  
Ion Beam ◽  
Ion Beam Mixing ◽  
Kinetics Of

Ion-beam mixing kinetics of Fe-Al multilayers studied by in situ electrical resistivity measurements

1984 ◽  
Vol 33 (2) ◽  
pp. 77-82 ◽  
Author(s):  
J. P. Rivi�re ◽  
J. Delafond ◽  
C. Jaouen ◽  
A. Bellara ◽  
J. F. Dinhut
Keyword(s):  
Electrical Resistivity ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Resistivity Measurements ◽  
Kinetics Of

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

Energy dependence of ion beam mixing at Fe-Al and Fe-Cu interface: A conversion electron Mössbauer spectroscopic study

1988 ◽  
Vol 106 (4) ◽  
pp. 297-309 ◽  
Author(s):  
D. M. Phase ◽  
Jayashree Patankar ◽  
V. N. Kulkarni ◽  
S. B. Ogale
Keyword(s):  
Spectroscopic Study ◽  
Energy Dependence ◽  
Conversion Electron ◽  
Ion Beam ◽  
Ion Beam Mixing
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