Electrical transport properties of thin cadmium films at low temperatures

1993 ◽  
Vol 90 (3-4) ◽  
pp. 281-304 ◽  
Author(s):  
A. K. Meikap ◽  
A. Das ◽  
S. Chatterjee
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Low Temperatures ◽  
Electrical Transport Properties

Magnetic and electrical transport properties of Sr2Ti1−xCoxO4 ceramics by sol–gel

2017 ◽  
Vol 31 (17) ◽  
pp. 1750195
Author(s):  
Li Zhang ◽  
Yibao Li ◽  
Zhen Tang ◽  
Yan Deng ◽  
Hui Yuan ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Low Temperatures ◽  
Sol Gel ◽  
Variable Range Hopping ◽  
Electrical Transport Properties ◽  
Co Doping ◽  
Hopping Model ◽  
Variable Range Hopping Model ◽  
Co Doped

Microstructures, electrical transport and magnetic properties of Sr[Formula: see text]Ti[Formula: see text]Co[Formula: see text]O[Formula: see text] ceramics are investigated. With Co doping, the Sr[Formula: see text]Ti[Formula: see text]Co[Formula: see text]O[Formula: see text] ceramics remain tetragonal structure while the grain size is decreased with doping. Magnetic moment is enhanced with Co doping and ferromagnetism is observed at low temperatures for Co-doped Sr[Formula: see text]TiO[Formula: see text]. The Sr[Formula: see text]Ti[Formula: see text]Co[Formula: see text]O[Formula: see text] and Sr[Formula: see text]Ti[Formula: see text]Co[Formula: see text]O[Formula: see text] show semiconductor-like transport properties, which can be well fitted by Mott variable range hopping model. The results will provide an effective route to synthesize Sr[Formula: see text]Ti[Formula: see text]Co[Formula: see text]O[Formula: see text] ceramics as well as to investigate the physical properties.

Structural and electrical transport properties of FeHxunder high pressures and low temperatures

2011 ◽  
Vol 31 (1) ◽  
pp. 64-67 ◽  
Author(s):  
Takahiro Matsuoka ◽  
Naohisa Hirao ◽  
Yasuo Ohishi ◽  
Katsuya Shimizu ◽  
Akihiko Machida ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Low Temperatures ◽  
High Pressures ◽  
Electrical Transport Properties

scholarly journals HIGH PRESSURE APPARATUS FOR TRANSPORT PROPERTIES STUDY IN HIGH MAGNETIC FIELD

2002 ◽  
Vol 16 (20n22) ◽  
pp. 3330-3333 ◽  
Author(s):  
F. HONDA ◽  
V. SECHOVSKÝ ◽  
O. MIKULINA ◽  
J. KAMARÁD ◽  
A. M. ALSMADI ◽  
...  
Keyword(s):  
Magnetic Field ◽  
High Pressure ◽  
Hydrostatic Pressure ◽  
Transport Properties ◽  
High Magnetic Field ◽  
Electrical Transport ◽  
Low Temperatures ◽  
Electrical Transport Properties ◽  
High Pressure Cell ◽  
High Pressure Apparatus

We have designed a high pressure apparatus for measuring electrical-transport properties at low temperatures, high magnetic field and hydrostatic pressure up to 10 kbar. Details of the high-pressure cell and an exemplary study on UNiAl are described and discussed briefly.

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

scholarly journals Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang
Keyword(s):  
Phase Transition ◽  
Electrical Conductivity ◽  
High Pressure ◽  
Phase Transformation ◽  
Transport Properties ◽  
Electrical Transport ◽  
Structural Phase ◽  
Structure Evolution ◽  
Systematic Research ◽  
Electrical Transport Properties

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.

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