Anisotropy effects in tantalum, niobium, and vanadium down to the millikelvin temperature range

1987 ◽  
Vol 66 (3-4) ◽  
pp. 191-208 ◽  
Author(s):  
F. M. Sauerzopf ◽  
E. Moser ◽  
H. W. Weber ◽  
F. A. Schmidt
Keyword(s):  
Temperature Range ◽  
Millikelvin Temperature

Scintillation studies ofCaWO4in the millikelvin temperature range

2007 ◽  
Vol 75 (18) ◽  
Author(s):  
V. B. Mikhailik ◽  
H. Kraus ◽  
S. Henry ◽  
A. J. B. Tolhurst
Keyword(s):  
Temperature Range ◽  
Millikelvin Temperature

Palladium-iron: A giant-moment magnetic thermometer for the millikelvin temperature range

1986 ◽  
Vol 64 (1) ◽  
pp. 115-118 ◽  
Author(s):  
M. Jutzler ◽  
B. Schr�der ◽  
K. Gloos ◽  
F. Pobell
Keyword(s):  
Temperature Range ◽  
Millikelvin Temperature

High Q value Quartz Tuning Fork in Vacuum as a Potential Thermometer in Millikelvin Temperature Range

2016 ◽  
Vol 187 (5-6) ◽  
pp. 573-579 ◽  
Author(s):  
M. Človečko ◽  
M. Grajcar ◽  
M. Kupka ◽  
P. Neilinger ◽  
M. Rehák ◽  
...  
Keyword(s):  
Tuning Fork ◽  
Quartz Tuning Fork ◽  
Q Value ◽  
High Q ◽  
Temperature Range ◽  
Millikelvin Temperature

Fe/Cr sensor for the milliKelvin temperature range

2001 ◽  
Vol 91 (1-2) ◽  
pp. 177-179
Author(s):  
I Vávra ◽  
J Bydžovský ◽  
K Flachbart ◽  
J Tejada ◽  
L Kopera ◽  
...  
Keyword(s):  
Temperature Range ◽  
Millikelvin Temperature

Design of RuO2-based thermometers for the millikelvin temperature range

Cryogenics ◽  
1995 ◽  
Vol 35 (2) ◽  
pp. 105-108 ◽  
Author(s):  
I. Bat'ko ◽  
K. Flachbart ◽  
M. Somora ◽  
D. Vanický
Keyword(s):  
Temperature Range ◽  
Millikelvin Temperature

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

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