Effect of the structure of a tin-oxide ceramic on its glass resistance

1989 ◽  
Vol 46 (5) ◽  
pp. 199-203 ◽  
Author(s):  
V. G. Panteleev ◽  
K. S. Ramm ◽  
T. I. Pron'kina
Keyword(s):  
Tin Oxide ◽  
Oxide Ceramic ◽  
Glass Resistance

Production of articles made from tin oxide ceramic

1979 ◽  
Vol 36 (6) ◽  
pp. 317-319
Author(s):  
M. N. Kucheryavyi ◽  
G. I. Astanina ◽  
V. T. Selyanko ◽  
I. K. Shlykov ◽  
I. I. Starchaus
Keyword(s):  
Tin Oxide ◽  
Oxide Ceramic

Advanced indium tin oxide ceramic sputtering targets (rotary and planar) for transparent conductive nanosized films

2013 ◽  
Vol 112 (5) ◽  
pp. 243-256 ◽  
Author(s):  
E Medvedovski ◽  
N A Alvarez ◽  
C J Szepesi ◽  
O Yankov ◽  
P Lippens
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Ceramic ◽  
Nanosized Films

Advanced Indium Tin Oxide Ceramic Sputtering Targets and Transparent Conductive Thin Films

2009 ◽  
pp. 241-256
Author(s):  
Eugene Medvedovski ◽  
Neil A. Alvarez ◽  
Christopher J. Szepesi ◽  
Olga Yankov ◽  
Maryam K. Olsson
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Ceramic ◽  
Conductive Thin Films

Sintering of tin oxide ceramic with additives

1982 ◽  
Vol 39 (12) ◽  
pp. 617-620
Author(s):  
T. E. Os'kina ◽  
K. B. Zaborenko ◽  
I. G. Mel'nikova ◽  
T. I. Pron'kina
Keyword(s):  
Tin Oxide ◽  
Oxide Ceramic

Deposition and Electrical Resistivity of Oxygen-Deficient Tin Oxide Films Prepared by RF Magnetron Sputtering at Different Powers

2018 ◽  
Vol 281 ◽  
pp. 504-509
Author(s):  
Qi Wang ◽  
Zhi Jian Peng ◽  
Yang Wang ◽  
Xiu Li Fu
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Oxide Films ◽  
Rf Magnetron Sputtering ◽  
Oxide Ceramic ◽  
Sputtering Power ◽  
Sputtering Pressure ◽  
Tin Oxide Films

A series of oxygen-deficient tin oxide thin films were deposited by radio frequency magnetron sputtering a sintered tin oxide ceramic target under pure argon atmosphere at different sputtering powers (80-160 w) under the based pressure of no more than 2.0×10-4 Pa, sputtering pressure of 2.0 Pa and deposition time of 20 min. It was revealed that all the as-deposited films were oxygen-deficient tin oxide films, and the main defect in films was oxygen vacancy (VO), whose concentration gradually decreased with the increase of sputtering power. The films prepared at a power of no more than 120 w were amorphous, and as the sputtering power increased to 140 and 160 w, the deposited thin films exhibited polycrystalline characteristics with (110), (101) and (211) diffraction peaks of tin oxide. The grain size, deposition rate as well as thickness of the obtained films rose up with increasing sputtering power. In addition, as the sputtering power raised, the electrical resistivity of the films increased, due to the electron conducting mechanism controlled by VO in the samples.

ELECTRICAL CONDUCTING AND MECHANISM OF OXYGEN-DEFICIENT TIN OXIDE FILMS DEPOSITED BY RF MAGNETRON SPUTTERING AT VARIOUS O2/Ar RATIOS

2018 ◽  
Vol 25 (04) ◽  
pp. 1850093 ◽  
Author(s):  
QI WANG ◽  
CHENGBIAO WANG ◽  
CHANGCHUN LV ◽  
YANG WANG ◽  
ZHIJIAN PENG ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Ceramic ◽  
X Ray Diffraction ◽  
Electrical Conducting ◽  
Diffraction Peaks ◽  
Main Defect ◽  
Tin Oxide Films

Oxygen-deficient tin oxide thin films were prepared by radiofrequency magnetron sputtering with a sintered non-stoichiometric tin oxide ceramic target under an atmosphere of various ratios of O2/Ar from pure Ar to 1:1. X-ray diffraction analysis showed that the thin films were polycrystalline with relatively strong (1 1 0), (1 0 1) and (2 1 1) diffraction peaks. Scanning electron microscopy observation revealed that the thin films prepared at different O2/Ar ratios were all of relatively dense and homogeneous structure. With increasing O2/Ar ratio, the grain size of the films decreased slightly, and their chemical composition became close to the stoichiometric SnO2; but the deposition rate as well as film thickness increased first and then decreased sharply. It was revealed that the main defect in obtained films was oxygen vacancy (VO), and as the O2/Ar ratio increased, the concentration of VO fell down monotonously, which would lead to an increased electrical resistivity.

Effect of heat treatment atmosphere on the piezoresistivity of indium tin oxide ceramic strain sensor

2019 ◽  
Vol 45 (14) ◽  
pp. 17048-17053 ◽  
Author(s):  
Shenyong Yang ◽  
Congchun Zhang ◽  
Xinyue Chang ◽  
Jianze Huang ◽  
Zhuoqing Yang ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Strain Sensor ◽  
Oxide Ceramic

Biotemplated facile synthesis of three‐dimensional micro/nanoporous tin oxide: improving the flammable and mechanical properties of flexible PVC

2019 ◽  
Vol 14 (8) ◽  
pp. 828-830 ◽  
Author(s):  
Weihua Meng ◽  
Weihong Wu ◽  
Weiwei Zhang ◽  
Luyao Cheng ◽  
Yunhong Jiao ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Tin Oxide ◽  
Three Dimensional ◽  
Facile Synthesis
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