Luminescent properties of uranyl ions adsorbed on the surface of disperse silicon dioxide

1993 ◽  
Vol 59 (3-4) ◽  
pp. 687-692 ◽  
Author(s):  
I. Ya. Kushnirenko ◽  
Yu. D. Glinka ◽  
V. Ya. Degoda ◽  
T. B. Krak ◽  
V. M. Ogenko
Keyword(s):  
Silicon Dioxide ◽  
Luminescent Properties ◽  
Uranyl Ions ◽  
Disperse Silicon Dioxide

Sorption of Uranyl Ions on Hydrous Silicon Dioxide

1992 ◽  
Vol 57 (1) ◽  
Author(s):  
Κ. H. Lieser ◽  
S. Quandt-Klenk ◽  
B. Thybusch
Keyword(s):  
Silicon Dioxide ◽  
Uranyl Ions

Improvement of Operating Voltage and Luminescent Properties in Nanocrystalline Silicon Electroluminescent Device

2004 ◽  
Vol 832 ◽  
Author(s):  
K. Sato ◽  
K. Hirakuri ◽  
T. Izumi
Keyword(s):  
Silicon Dioxide ◽  
Hydrofluoric Acid ◽  
Luminescent Properties ◽  
Nanocrystalline Silicon ◽  
Operating Voltage ◽  
Si Substrate ◽  
Naked Eye ◽  
Order Of Magnitude ◽  
Red Luminescence ◽  
Nanocrystalline Si

ABSTRACTWe have investigated direct current (DC) operating voltage and luminescence properties of electroluminescent (EL) devices with and/or without a silicon dioxide (SiO2) layer in nanocrystalline Si (nc-Si) region/Si substrate interface. The device with the SiO2 layer showed red luminescence with a peak at 670 nm by applying the DC operating voltage above 4.0 V. When the SiO2 layer in the device was completely removed by the hydrofluoric acid (HF) treatment, the red luminescence from the device was observed at the DC operating voltage of 2.0 V. Moreover, the luminescent intensity was also increased more than one order of magnitude, because carriers were efficiently and easily injected into the nc-Si region by the removal of SiO2 layer. The red luminescence from the device could be clearly seen with the naked eye under the DC operating voltage above 3.0 V. These results indicate that the removal of SiO2 layer leads to the lowering of DC operating voltage and increase of luminance for the nc-Si based EL device.

scholarly journals Properties of Silicon Dioxide Amorphous Nanopowder Produced by Pulsed Electron Beam Evaporation

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Vladislav G. Il’ves ◽  
Michael G. Zuev ◽  
Sergey Yu. Sokovnin
Keyword(s):  
Optical Properties ◽  
Electron Beam ◽  
Silicon Dioxide ◽  
Specific Surface ◽  
Surface Area ◽  
Specific Surface Area ◽  
Room Temperature ◽  
Luminescent Properties ◽  
Electron Beam Evaporation ◽  
Pulsed Electron Beam

SiO2amorphous nanopowder (NP) is produced with the specific surface area of 154 m2/g by means of evaporation by a pulsed electron beam aimed at Aerosil 90 pyrogenic amorphous NP (90 m2/g) as a target. SiO2NP nanoparticles showed improved magnetic, thermal, and optical properties in comparison to Aerosil 90 NP. Possible reasons of emergence of d0ferromagnetism at the room temperature in SiO2amorphous NP are discussed. Photoluminescent and cathode luminescent properties of the SiO2NP were investigated.

Structure Formation of Cement Stone Modified with Additive of Nano-Disperse Silicon Dioxide

2018 ◽  
Vol 765 (11) ◽  
pp. 31-35
Author(s):  
V.V. TYUKAVKINA ◽  
◽  
A.G. KASIKOV ◽  
B.I. GUREVICH ◽  
◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Structure Formation ◽  
Cement Stone ◽  
Disperse Silicon Dioxide

scholarly journals Ловушки в нанокомпозитном слое кремний-диоксид кремния и их влияние на люминесцентные свойства

2019 ◽  
Vol 61 (8) ◽  
pp. 1448
Author(s):  
П.А. Дементьев ◽  
E.B. Иванова ◽  
M.B. Заморянская
Keyword(s):  
Activation Energy ◽  
Silicon Dioxide ◽  
Charge State ◽  
Luminescent Properties ◽  
Kelvin Probe ◽  
Electron Traps ◽  
Pure Silicon ◽  
Kelvin Probe Microscopy ◽  
Nanocomposite Layer ◽  
Thermal Films

The traps in thermal films of silicon dioxide and silicon dioxide with a nanocomposite layer on the surface were investigated by Kelvin-probe microscopy and cathode luminescence. In the layers, both electron traps and hole traps are observed. The effect of the charge state of electron traps on the luminescent properties of films is demonstrated. It is shown that in the presence of a nanocomposite layer in silicon dioxide films, the number of electron traps increases, but their activation energy remains close to the activation energy of traps in pure silicon dioxide, which suggests that the nature of the traps in such layers is similar.

Solvothermal fabrication and luminescent properties of nanoLuAG:Ce phosphors

2014 ◽  
Vol 9 (1) ◽  
pp. 60-63 ◽  
Author(s):  
Lin Xing ◽  
Lianghui Qu ◽  
Qing He ◽  
Tong B. Tang ◽  
Linfeng Yang
Keyword(s):  
Luminescent Properties

Buckling Control of Silicon Dioxide Diaphragms for Sensitivity Enhancement of Piezoelectric Ultrasonic Microsensors

2011 ◽  
Vol 131 (7) ◽  
pp. 235-239 ◽  
Author(s):  
Kaoru Yamashita ◽  
Tomoya Yoshizaki ◽  
Minoru Noda ◽  
Masanori Okuyama
Keyword(s):  
Silicon Dioxide ◽  
Sensitivity Enhancement
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