Kinetics of luminescence spectra of molecular xenon in Xe/He and Xe/Ar mixtures excited by an electron beam

1985 ◽  
Vol 42 (5) ◽  
pp. 504-506
Author(s):  
Yu. I. Dymshits ◽  
V. A. Korobitsynt
Keyword(s):  
Electron Beam ◽  
Luminescence Spectra ◽  
Kinetics Of

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

scholarly journals Kinetic modelling of NO heterogeneous radiation-catalytic oxidation on the TiO2 surface in humid air under the electron beam irradiation

Nukleonika ◽  
2017 ◽  
Vol 62 (3) ◽  
pp. 235-240 ◽  
Author(s):  
Henrietta Nichipor ◽  
Yongxia Sun ◽  
Andrzej G. Chmielewski
Keyword(s):  
Electron Beam ◽  
Catalytic Oxidation ◽  
Removal Efficiency ◽  
Electron Beam Irradiation ◽  
Kinetic Modelling ◽  
Water Concentration ◽  
Beam Irradiation ◽  
Humid Air ◽  
Kinetics Of ◽  
Influential Parameters

Abstract Theoretical study of NOx removal from humid air by a hybrid system (catalyst combined with electron beam) was carried out. The purpose of this work is to study the possibility to decrease energy consumption for NOx removal. The kinetics of radiation catalytic oxidation of NO on the catalyst TiO2 surface under electron beam irradiation was elaborated. Program Scilab 5.3.0 was used for numerical simulations. Influential parameters such as inlet NO concentration, dose, gas fl ow rate, water concentration and catalyst contents that can affect NOx removal efficiency were studied. The results of calculation show that the removal efficiency of NOx might be increased by 8-16% with the presence of a catalyst in the gas irradiated field.

Degradation kinetics of electron beam irradiated poly(propylene-co-ethylene) heterophasic copolymer

2011 ◽  
Vol 80 (7) ◽  
pp. 810-816 ◽  
Author(s):  
Mojtaba Koosha ◽  
Nastaran Ebrahimi ◽  
Yousef Jahani ◽  
Seyed Abolfazl Seyed Sajjadi
Keyword(s):  
Electron Beam ◽  
Degradation Kinetics ◽  
Poly Propylene ◽  
Kinetics Of

Specific features of the population kinetics of levels of noble gases in experiments with a pulsed electron beam

2003 ◽  
Vol 95 (3) ◽  
pp. 333-335
Author(s):  
V. I. Yakovleva ◽  
V. E. Yakhontova ◽  
A. B. Tsyganov ◽  
I. E. Kozlov
Keyword(s):  
Electron Beam ◽  
Noble Gases ◽  
Pulsed Electron Beam ◽  
Population Kinetics ◽  
Kinetics Of

Electron Microprobe and Photoluminescence Analysis of Europium-Doped Gallium Nitride Light Emitters

2002 ◽  
Vol 743 ◽  
Author(s):  
R. W. Martin ◽  
S. Dalmasso ◽  
K. P. O'Donnell ◽  
Y. Nakanishi ◽  
A. Wakahara ◽  
...  
Keyword(s):  
Electron Beam ◽  
Rare Earth ◽  
Visible Region ◽  
Depth Profiling ◽  
Luminescence Spectra ◽  
Light Emitters ◽  
Doping Density ◽  
Annealing Conditions ◽  
Electron Transitions ◽  
Doped Glass

ABSTRACTRare-earth doped GaN structures offer potential for optical devices emitting in the visible region [1,2]. We describe a study of MOVPE grown GaN-on-sapphire epilayers implanted with Europium ions, producing characteristic red emission lines between 540 and 680 nm due to intra-4f(n) electron transitions. As-implanted and subsequently annealed samples are investigated using a combination of wavelength dispersive x-ray analysis (WDX), electron microscopy, cathodoluminescence (CL) and photoluminescence (PL). WDX is shown to be a powerful technique for quantifying rare-earth concentrations in GaN, with varying electron beam voltages allowing a degree of depth profiling, further enhanced by the simultaneous collection of room temperature luminescence (CL) from the analysed region [3]. The intensities of the sharp lines observed in the luminescence spectrum are compared to the doping density (between 1014 – 1015 cm−2) and the Eu content measured by WDX, using a Eu-doped glass standard. Differences observed in the luminescence spectra produced by laser and electron beam excitation will be discussed along with the importance of the annealing conditions, which “heal” defects visible in the electron micrographs.

Fluorescence yields and kinetics of electron-beam pumped, halogen laser media

1976 ◽  
Vol 18 (1) ◽  
pp. 119-120 ◽  
Author(s):  
M.V. McCusker ◽  
R.M. Hill ◽  
D.L. Huestis ◽  
D.C. Lorents ◽  
H.H. Nakano
Keyword(s):  
Electron Beam ◽  
Laser Media ◽  
Kinetics Of
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