Method of assessing the thermal stability of cellulose acetate

1971 ◽  
Vol 1 (5) ◽  
pp. 526-527
Author(s):  
Z. B. Komarova ◽  
O. G. Efremova
Keyword(s):  
Thermal Stability ◽  
Cellulose Acetate ◽  
Thermal Stability Of

Thermal stability of cellulose acetate from wood pulp

1978 ◽  
Vol 10 (2) ◽  
pp. 158-159
Author(s):  
T. A. Grigor'eva ◽  
V. N. Kryazhev ◽  
N. S. Minaeva ◽  
Yu. L. Pogosov ◽  
T. M. Kubaenko ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Cellulose Acetate ◽  
Wood Pulp ◽  
Thermal Stability Of

Cellulose acetate containing CaO coated on polypropylene for enhanced thermal stability of separator

2021 ◽  
Author(s):  
Hye Ji Lee ◽  
Sang Wook Kang
Keyword(s):  
Thermal Stability ◽  
Cellulose Acetate ◽  
Calcium Oxide ◽  
High Thermal Stability ◽  
High Melting ◽  
Thermal Stability Of

In this study, cellulose acetate (CA) and calcium oxide was used to manufacture an CA-CaO separator with high thermal stability and was then coated on polypropylene (PP). The high melting...

A STUDY OF THE SULPHATE ESTER OF UNSTABILIZED CELLULOSE ACETATE

1954 ◽  
Vol 32 (6) ◽  
pp. 566-580 ◽  
Author(s):  
Karl Keirstead ◽  
John Myers
Keyword(s):  
Thermal Stability ◽  
Ion Exchange ◽  
Cellulose Acetate ◽  
Salt Solution ◽  
Sulphate Content ◽  
Fibrous Cellulose ◽  
Thermal Stability Of

Evidence for the existence of the ester form of the sulphate in unstabilized cellulose acetate has been examined by ion exchange studies on precipitated and fibrous cellulose acetate. The equilibrium reached during ion exchange is affected by the pH and by the concentration of the salt solution used. The thermal stability of the ester is shown to vary inversely with the sulphate content. A study has been made of the accuracy of the various analyses involved.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of
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