Carrier frequency-dependent intrinsic parameters in an ion-implanted silicon photo-MESFET

V. K. Singh; B. B. Pal

doi:10.1007/bf00624604

Carrier frequency-dependent intrinsic parameters in an ion-implanted silicon photo-MESFET

Applied Physics A Solids and Surface ◽

10.1007/bf00624604 ◽

1987 ◽

Vol 44 (4) ◽

pp. 361-364 ◽

Cited By ~ 2

Author(s):

V. K. Singh ◽

B. B. Pal

Keyword(s):

Carrier Frequency ◽

Frequency Dependent ◽

Intrinsic Parameters ◽

Ion Implanted

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Surface recombination and carrier-frequency-dependent intrinsic parameters of an ion-implanted GaAs OPFET

Semiconductor Science and Technology ◽

10.1088/0268-1242/6/4/001 ◽

1991 ◽

Vol 6 (4) ◽

pp. 231-236 ◽

Cited By ~ 1

Author(s):

V K Singh ◽

S R Singh ◽

B B Pal

Keyword(s):

Carrier Frequency ◽

Surface Recombination ◽

Frequency Dependent ◽

Intrinsic Parameters ◽

Ion Implanted

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Low Complexity Compensation of Frequency Dependent I/Q Imbalance and Carrier Frequency Offset for Direct Conversion Receivers

IEICE Transactions on Communications ◽

10.1587/transcom.e95.b.484 ◽

2012 ◽

Vol E95-B (2) ◽

pp. 484-492 ◽

Cited By ~ 1

Author(s):

Leonardo LANANTE, Jr. ◽

Masayuki KUROSAKI ◽

Hiroshi OCHI

Keyword(s):

Carrier Frequency ◽

Carrier Frequency Offset ◽

Low Complexity ◽

Direct Conversion ◽

Frequency Offset ◽

Frequency Dependent ◽

Direct Conversion Receivers

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Frequency-dependent characteristics of an ion-implanted GaAs MESFET with opaque gate under illumination

Journal of Lightwave Technology ◽

10.1109/50.822796 ◽

2000 ◽

Vol 18 (2) ◽

pp. 221-229 ◽

Cited By ~ 11

Author(s):

N.S. Roy ◽

B.B. Pal ◽

R.U. Khan

Keyword(s):

Frequency Dependent ◽

Gaas Mesfet ◽

Ion Implanted

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Effect of surface recombination and modulated frequency on the intrinsic parameters of an ion-implanted GaAs OPFET

10.1117/12.57026 ◽

1992 ◽

Author(s):

Vinaya K. Singh ◽

S. R. Singh ◽

B. B. Pal

Keyword(s):

Surface Recombination ◽

Intrinsic Parameters ◽

Effect Of Surface ◽

Ion Implanted

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Carrier Frequency Dependent Downlink Spectral Efficiency of Cellular LTE Deployments

10.1109/icc.2009.5198811 ◽

2009 ◽

Cited By ~ 3

Author(s):

M. Krondorf ◽

G. Fettweis

Keyword(s):

Spectral Efficiency ◽

Carrier Frequency ◽

Frequency Dependent

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Tuning of Human Modulation Filters Is Carrier-Frequency Dependent

PLoS ONE ◽

10.1371/journal.pone.0073590 ◽

2013 ◽

Vol 8 (8) ◽

pp. e73590 ◽

Cited By ~ 2

Author(s):

Andrew J. R. Simpson ◽

Joshua D. Reiss ◽

David McAlpine

Keyword(s):

Carrier Frequency ◽

Frequency Dependent

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Multi-band behavioral modeling of power amplifier using carrier frequency-dependent time delay neural network model

2017 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization for RF, Microwave, and Terahertz Applications (NEMO) ◽

10.1109/nemo.2017.7964194 ◽

2017 ◽

Cited By ~ 1

Author(s):

Zhihao Zhao ◽

Weicong Na ◽

Venu-Madhav-Reddy Gongal-Reddy ◽

Qijun Zhang

Keyword(s):

Neural Network ◽

Time Delay ◽

Power Amplifier ◽

Network Model ◽

Neural Network Model ◽

Carrier Frequency ◽

Behavioral Modeling ◽

Frequency Dependent ◽

Multi Band

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Frequency dependent behaviour of an ion implanted GaAs OPFET considering the photovoltaic effect and the gate depletion width modulation

Solid-State Electronics ◽

10.1016/0038-1101(95)98680-2 ◽

1995 ◽

Vol 38 (5) ◽

pp. 1097-1102 ◽

Cited By ~ 3

Author(s):

B.B.Pal Shubha ◽

K Honey Kumar ◽

R.U Khan

Keyword(s):

Photovoltaic Effect ◽

Frequency Dependent ◽

Depletion Width ◽

Dependent Behaviour ◽

Ion Implanted

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Low complexity compensation of frequency dependent I/Q imbalance and carrier frequency offset for direct conversion receivers

Proceedings of 2010 IEEE International Symposium on Circuits and Systems ◽

10.1109/iscas.2010.5537237 ◽

2010 ◽

Cited By ~ 5

Author(s):

Leonardo Lanante ◽

Masayuki Kurosaki ◽

Hiroshi Ochi

Keyword(s):

Carrier Frequency ◽

Carrier Frequency Offset ◽

Low Complexity ◽

Direct Conversion ◽

Frequency Offset ◽

Frequency Dependent ◽

Direct Conversion Receivers

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The effect of surface recombination on the frequency-dependent characteristics of an ion-implanted GaAs OPFET

IEEE Transactions on Electron Devices ◽

10.1109/16.52427 ◽

1990 ◽

Vol 37 (4) ◽

pp. 942-946 ◽

Cited By ~ 11

Author(s):

S. Mishra ◽

V.K. Singh ◽

B.B. Pal

Keyword(s):

Surface Recombination ◽

Frequency Dependent ◽

Effect Of Surface ◽

Ion Implanted

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