Dynamical thermal properties of broad-contact double-heterostructure GaAs-(AIGa)As laser diodes

1983 ◽  
Vol 15 (4) ◽  
pp. 313-324 ◽  
Author(s):  
W?odzimierz Nakwaski
1996 ◽  
Vol 450 ◽  
Author(s):  
M. Razeghi ◽  
J. Diaz ◽  
H. J. Yi ◽  
D. Wu ◽  
B. Lane ◽  
...  

ABSTRACTWe report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output power up to 1 W (from two facets) with differential efficiency above 70 % up to 150 K was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.6 μm at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm2 at 78 K were achieved from the double-heterostructure lasers emitting at 3.2 μm. The far-field beam divergence as narrow as 24° was achieved with the use of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.


1995 ◽  
Vol 62 (5) ◽  
pp. 900-902 ◽  
Author(s):  
G. I. Ryabtsev ◽  
A. N. Kuzmin ◽  
J. A. Ges ◽  
Yu. P. Gorban ◽  
M. Soukieh ◽  
...  

2016 ◽  
Author(s):  
Zhiyong Li ◽  
Rongqing Tan ◽  
Wei Huang ◽  
Qing Ye ◽  
Gaoce Han ◽  
...  

2009 ◽  
Vol 1195 ◽  
Author(s):  
Aland K. Chin ◽  
Rick K. Bertaska ◽  
Martin A. Jaspan ◽  
Allen M. Flusberg ◽  
Steve D. Swartz ◽  
...  

AbstractA detailed description of the phenomenon of catastrophic optical-damage (COD) in short (380μm cavity-length), 12μm aperture, proton-bombarded, double-heterostructure laser-diodes with uncoated facets was first presented in 1974. In these devices, COD generally initiates at the facets due to high optical-power density and propagate along transverse-mode filaments. To achieve reliable operation at high optical-power, broad-area laser-diodes have evolved to long (several-millimeter cavity-length), wide-aperture (50-200μm), dielectric-defined, broadened-waveguide, separate-confinement, double-heterostructure, quantum-well laser-diodes with coated, passivated facets. COD in these devices involve both transverse modes and ring-cavity modes.


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