Formation of p-type layer by KrF excimer laser doping of carbon into GaAs in CH4 gas ambient

1989 ◽  
Vol 49 (6) ◽  
pp. 723-727 ◽  
Author(s):  
K. Sugioka ◽  
K. Toyoda ◽  
K. Tachi ◽  
M. Otsuka
Keyword(s):  
Excimer Laser ◽  
Laser Doping ◽  
Type Layer ◽  
Krf Excimer Laser ◽  
P Type

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication

2019 ◽  
Vol 963 ◽  
pp. 403-406
Author(s):  
Kaname Imokawa ◽  
Toshifumi Kikuchi ◽  
Kento Okamoto ◽  
Daisuke Nakamura ◽  
Akihiro Ikeda ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Low Cost ◽  
Device Fabrication ◽  
Contact Resistivity ◽  
Power Devices ◽  
High Concentration ◽  
Laser Doping ◽  
Krf Excimer Laser ◽  
Al Thin Film

We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of 4H-SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.

Ohmic Contact of p-Type ZnSe Using Heavily Alkaline Doped p+-ZnSe by Excimer Laser Doping Technique

1997 ◽  
Author(s):  
Toru Aoki ◽  
Akira Ishibashi ◽  
Masaharu Nagai ◽  
Yoshinori Hatanaka
Keyword(s):  
Excimer Laser ◽  
Ohmic Contact ◽  
Laser Doping ◽  
Doping Technique ◽  
P Type

I-V Characteristics and Interface Properties of Al-Si(P) Contacts by the Krf Excimer Laser Induced Recrystallization

1992 ◽  
Vol 283 ◽  
Author(s):  
K. Sohn ◽  
H. Lee ◽  
D. A. Hensley
Keyword(s):  
Excimer Laser ◽  
Ohmic Contacts ◽  
Schottky Diodes ◽  
Interface Properties ◽  
Auger Analysis ◽  
Effective Barrier ◽  
Thermionic Field Emission ◽  
Krf Excimer Laser ◽  
The One ◽  
P Type

ABSTRACTAl was deposited on the both sides of p-type Si by the sputtering, and the pulsed KrF excimer laser was irradiated on the one side and both sides of Al dot contacts. Due to the thin-high doping recrystallized layer, the transitions from the Schottky diodes to the ohmic contacts via backward diodes were observed in I-V measurement. Good N-shape negative resistances and notches were observed in the diodes, and ohmic contacts. Possible interpretations of the orgin of these phenomena are discussed. And, the simple model of the effective barrier height reduction under the thermionic field emission was developed using WKB approximation, and tunneling theory. By the depth Auger analysis, Al, and Si profiles near Al-Si interface after the laser irradiation were observed.

Heavily doped p-type ZnSe layer formation by excimer laser doping

1998 ◽  
Vol 184-185 ◽  
pp. 425-428 ◽  
Author(s):  
Y. Hatanaka ◽  
T. Aoki ◽  
T. Arakawa ◽  
D. Noda ◽  
Y. Nakanishi
Keyword(s):  
Excimer Laser ◽  
Layer Formation ◽  
Laser Doping ◽  
Znse Layer ◽  
Heavily Doped ◽  
P Type

p-Type ZnO Layer Formation by Excimer Laser Doping

2002 ◽  
Vol 229 (2) ◽  
pp. 911-914 ◽  
Author(s):  
T. Aoki ◽  
Y. Shimizu ◽  
A. Miyake ◽  
A. Nakamura ◽  
Y. Nakanishi ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Layer Formation ◽  
Laser Doping ◽  
P Type
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