Characterization of sol-gel derived Mg-doped PbTiO3 thin films

1996 ◽  
Vol 15 (4) ◽  
pp. 298-300 ◽  
Author(s):  
Jiin-Jyh Shyu ◽  
Kom-Lin Mo
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Mg Doped

Low temperature dielectric characterization of Mg-doped SrTiO3 thin films prepared by sol-gel

2010 ◽  
Vol 96 (15) ◽  
pp. 152906 ◽  
Author(s):  
Olena Okhay ◽  
Aiying Wu ◽  
Paula M. Vilarinho ◽  
Alexander Tkach
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Sol Gel ◽  
Dielectric Characterization ◽  
Mg Doped

Preparation and characterization of Mg-doped ZnO thin films by sol–gel method

2012 ◽  
Vol 258 (8) ◽  
pp. 3710-3713 ◽  
Author(s):  
Kai Huang ◽  
Zhen Tang ◽  
Li Zhang ◽  
Jiangyin Yu ◽  
Jianguo Lv ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Doped Zno ◽  
Mg Doped

Elaboration and Characterization of Mg-Doped ZnO Thin Films by Thermal Evaporation: Annealing Temperature Effect

2021 ◽  
Author(s):  
Fouaz Lekoui ◽  
Salim Hassani ◽  
Mohammed Ouchabane ◽  
Hocine Akkari ◽  
Driss Dergham ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Effect ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Mg Doped

Characterization of SrBi2Nb2O9 Thin Films Prepared by Sol Gel Technique

1996 ◽  
Vol 459 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
D. Ravichandran ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Band ◽  
Sol Gel ◽  
Orthorhombic Symmetry ◽  
X Ray Diffraction ◽  
Ft Ir ◽  
Gel Technique ◽  
High Degree ◽  
First Time

ABSTRACTThin films of SrBi2Nb2O9 (SBN) with thicknesses of 0.1, 0.2, and 0.4 μ were grown by Sol-gel technique on silicon, and annealed at 650°C. The SBN films were investigated by Raman scatering for the first time. Raman spectra in some of the samples present bands around 60, 167, 196, 222, 302, 451, 560, 771, 837, and 863 cm−1, which correspond to the SBN formation. The study indicates that the films are inhomogeneous, and only in samples with thicknesses 0.4 μ the SBN material was found in some places. The prominent Raman band around 870 cm−1, which is the A1g mode of the orthorhombic symmetry, is assigned to the symmetric stretching of the NbO6 octahedrals. The frequency of this band is found to shift in different places in the same sample, as well as from sample to sample. The frequency shifts and the width of the Raman bands are discussed in term of ions in non-equilibrium positions. FT-IR spectra reveal a sharp peak at 1260 cm−1, and two broad bands around 995 and 772 cm−1. The bandwidths of the latter two bands are believed to be associated with the presence of a high degree of defects in the films. The experimental results of the SBN films are compared with those obtained in SBT (T=Ta) films. X-ray diffraction and SEM techniques are also used for the structural characterization.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

Structure and optoelectronic properties of Mg-doped CuFeO2 thin films prepared by sol–gel method

2013 ◽  
Vol 577 ◽  
pp. 658-662 ◽  
Author(s):  
Zanhong Deng ◽  
Xiaodong Fang ◽  
Suzhen Wu ◽  
Yiping Zhao ◽  
Weiwei Dong ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Optoelectronic Properties ◽  
Gel Method ◽  
Sol Gel Method ◽  
Mg Doped

Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Gel Technique

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.

Growth and characterization of β-Ga2O3 thin films by sol-gel method for fast-response solar-blind ultraviolet photodetectors

2018 ◽  
Vol 766 ◽  
pp. 601-608 ◽  
Author(s):  
Hao Shen ◽  
Yinong Yin ◽  
Kun Tian ◽  
Karthikeyan Baskaran ◽  
Libing Duan ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Fast Response ◽  
Gel Method ◽  
Sol Gel Method ◽  
Solar Blind ◽  
Ultraviolet Photodetectors
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