A study of the effects of annealing, zinc diffusion and copper diffusion on the defect structure of silicon-doped gallium arsenide

1982 ◽  
Vol 17 (2) ◽  
pp. 406-416 ◽  
Author(s):  
P. W. Hutchinson ◽  
R. K. Ball
Keyword(s):  
Gallium Arsenide ◽  
Defect Structure ◽  
Copper Diffusion ◽  
Zinc Diffusion ◽  
Silicon Doped

Positron annihilation study of the diffusion of oxygen in annealed silicon-doped gallium arsenide

2002 ◽  
Vol 82 (17) ◽  
pp. 1809-1815
Author(s):  
A. C. Towner ◽  
M. Nathwani ◽  
A. S. Saleh ◽  
D. P. van der Werf ◽  
P. Rice-Evans
Keyword(s):  
Gallium Arsenide ◽  
Positron Annihilation ◽  
Positron Annihilation Study ◽  
Silicon Doped

The defect structure of Te-doped GaAs after zinc diffusion

1982 ◽  
Vol 46 (6) ◽  
pp. 915-930 ◽  
Author(s):  
R. K. Ball ◽  
P. W. Hutchinson ◽  
P. S. Dobson
Keyword(s):  
Defect Structure ◽  
Zinc Diffusion

Evidence of pre-thermalization trapping of positrons in neutron-irradiated silicon-doped gallium arsenide

1991 ◽  
Vol 63 (4) ◽  
pp. 923-930 ◽  
Author(s):  
S. C. Creamer ◽  
P. C. Rice-Evans ◽  
G. A. Gledhill ◽  
J. D. Collins
Keyword(s):  
Gallium Arsenide ◽  
Silicon Doped

Diffusion and electrical properties of silicon‐doped gallium arsenide

1985 ◽  
Vol 57 (12) ◽  
pp. 5181-5187 ◽  
Author(s):  
Mark E. Greiner ◽  
James F. Gibbons
Keyword(s):  
Gallium Arsenide ◽  
Electrical Properties ◽  
Silicon Doped

Dislocation-free silicon-doped gallium arsenide grown by LEC procedure

1983 ◽  
Vol 63 (2) ◽  
pp. 415-418 ◽  
Author(s):  
R. Fornari ◽  
C. Paorici ◽  
L. Zanotti ◽  
G. Zuccalli
Keyword(s):  
Gallium Arsenide ◽  
Free Silicon ◽  
Silicon Doped
Sign in / Sign up

Export Citation Format

Share Document