SIMS investigations of titanium profiles in LiNbO3 produced by ion beam mixing and diffusion

1989 ◽  
Vol 333 (4-5) ◽  
pp. 485-487 ◽  
Author(s):  
T. Bremer ◽  
D. Kollewe ◽  
H. Koschmieder ◽  
W. Heiland
Keyword(s):  
Ion Beam ◽  
Ion Beam Mixing ◽  
And Diffusion

Diffusion of A Deposited GeSe Film in GaAs using Ion-Beam Mixing

1985 ◽  
Vol 45 ◽  
Author(s):  
N. J. Kepler ◽  
N. W. Cheung
Keyword(s):  
Integrated Circuits ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Threshold Temperature ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Furnace Annealing ◽  
Ion Beam Mixing ◽  
Heavily Doped ◽  
And Diffusion

ABSTRACTIon-beam mixing and rapid thermal annealing (RTA) techniques are used to form shallow and heavily-doped n+ layers in undoped GaAs. RTA reduces surface degradation and improves crystalline quality compared to lengthy thermal cycles, although furnace annealing producesidentical electrical characteristics. Ion-beam mixing has only a small effect on the diffusion of a deposited GeSe film, because the damage created by implantation is repaired during RTA before significant diffusion occurs. We define a threshold temperature representing the onset of significant electrical activation and/or diffusion, and propose a model relating the annealing, activation, and diffusion temperatures for the GeSe/GaAs system. RBS. SIMS, and electrical measurements show that extremely shallow layers with a sheet resistivity as low as 1480/El can be formed in GaAs by diffusion from a GeSe source. This technique has potential application to the formation of shallow ohmic contacts for GaAs integrated circuits.

scholarly journals Mixing of Al Into Uranium Silicides Reactor Fuels

1996 ◽  
Vol 439 ◽  
Author(s):  
Fu-Rong Ding ◽  
R. C. Birtcher ◽  
B. J. Kestel ◽  
P. M. Baldo
Keyword(s):  
Ion Beam ◽  
High Dose ◽  
Ion Beam Mixing ◽  
Dose Irradiation ◽  
Fuel Burn ◽  
Fission Gas ◽  
Mixing Rates ◽  
Radiation Induced ◽  
And Diffusion ◽  
Swelling Behaviors

AbstractSEM observations have shown that irradiation induced interaction of the aluminum cladding with uranium silicide reactor fuels strongly affects both fission gas and fuel swelling behaviors during fuel burn-up. We have used ion beam mixing, by 1.5 MeV Kr, to study this phenomena. RBS and the 27 A1( p, γ) 28 Si resonance nuclear reaction to was used to measure radiation induced mixing of Al into U3Si and U3Si2 after irradiation at 300γ;C.Initially U mixes into the Al layer and Al mixes into the U3 Si. At a low doses, the Al layer is converted into Ual4 type compound while near the interface the phase U(Al93 Si. 07 )3 grows. Under irradiation, Al diffuses out of the Ual4 surface layer, and the lower density ternary, which is stable under irradiation, is the final product. Al mixing into U3 Si2 is slower than in U3 Si, but after high dose irradiation the Al concentration extends much father into the bulk. In both systems Al mixing and diffusion is controlled by phase formation and growth. The Al mixing rates into the two alloys are similar to that of Al into pure uranium where similar aluminide phases are formed.

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

Energy dependence of ion beam mixing at Fe-Al and Fe-Cu interface: A conversion electron Mössbauer spectroscopic study

1988 ◽  
Vol 106 (4) ◽  
pp. 297-309 ◽  
Author(s):  
D. M. Phase ◽  
Jayashree Patankar ◽  
V. N. Kulkarni ◽  
S. B. Ogale
Keyword(s):  
Spectroscopic Study ◽  
Energy Dependence ◽  
Conversion Electron ◽  
Ion Beam ◽  
Ion Beam Mixing

scholarly journals Formation of the titanium-aluminum intermetallic compounds by ion-beam mixing

2020 ◽  
Vol 1713 ◽  
pp. 012012
Author(s):  
P V Bykov ◽  
V L Vorob’ev ◽  
I N Klimova ◽  
A A Kolotov ◽  
A Yu Drozdov ◽  
...  
Keyword(s):  
Intermetallic Compounds ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Titanium Aluminum

Ion beam mixing to study the metallic glass formation of the Cu–Zr system

2010 ◽  
Vol 64 (1) ◽  
pp. 96-98 ◽  
Author(s):  
T.L. Wang ◽  
W.T. Huang ◽  
W.C. Wang ◽  
B.X. Liu
Keyword(s):  
Metallic Glass ◽  
Glass Formation ◽  
Ion Beam ◽  
Ion Beam Mixing

The Characteristics of TiCrN Film Prepared by the Dynamic Ion Beam Mixing Method

2003 ◽  
Vol 426-432 ◽  
pp. 2569-2574
Author(s):  
Hiroshi Nagasaka ◽  
T. Yamakawa ◽  
T. Kataoka ◽  
M. Kakutani ◽  
T. Takeuchi ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Mixing ◽  
Mixing Method

Ion beam mixing of Pd/V superlattices studied by X-ray diffractometry

1989 ◽  
Vol 213 (2-3) ◽  
pp. A230
Author(s):  
M. StróŻak ◽  
P. MikoŁajczak ◽  
M. Subotowicz
Keyword(s):  
Ion Beam ◽  
Ion Beam Mixing ◽  
X Ray
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