670 nm AlGaInP/GaInP strained multi-quantum well laser diode with high characteristic temperature (T 0)

1995 ◽  
Vol 27 (5) ◽  
pp. 435-440 ◽  
Author(s):  
Jong-Seok Kim ◽  
Min Yang ◽  
Won-Jin Choi ◽  
Ji-Ho Chang ◽  
In-Seong Cho ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Characteristic Temperature ◽  
Quantum Well Laser ◽  
Multi Quantum Well

2μm InGaAsSb/AlGaAsSb Multi-quantum Well Laser Diode with Electron Stopper Layer

2014 ◽  
Vol 35 (10) ◽  
pp. 1205-1209
Author(s):  
安宁 AN Ning ◽  
刘国军 LIU Guo-jun ◽  
李占国 LI Zhan-guo ◽  
常量 CHANG Liang ◽  
魏志鹏 WEI Zhi-peng ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Quantum Well Laser ◽  
Multi Quantum Well

Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature

2008 ◽  
Vol 25 (4) ◽  
pp. 1281-1283 ◽  
Author(s):  
Zhang Li-Qun ◽  
Zhang Shu-Ming ◽  
Yang Hui ◽  
Cao Qing ◽  
Ji Lian ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Room Temperature ◽  
Continuous Wave ◽  
Quantum Well Laser ◽  
Continuous Wave Operation ◽  
Multi Quantum Well

AlGaAs/GaAs superlattice multi-quantum-well laser diode

1989 ◽  
Vol 5 (2) ◽  
pp. 167-170
Author(s):  
H. Imamoto ◽  
F. Sato ◽  
K. Imanaka ◽  
M. Shimura
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Quantum Well Laser ◽  
Multi Quantum Well

Visible multi-quantum-well laser diode composed of (AlGaAs)m(GaAs)n short period superlattice

1989 ◽  
Vol 25 (2) ◽  
pp. 121
Author(s):  
H. Imamoto ◽  
F. Sato ◽  
K. Imanaka ◽  
M. Shimura
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Quantum Well Laser ◽  
Short Period ◽  
Multi Quantum Well

High Efficiency InGaAs/InGaAsP Compressively Strained Multi-Quantum-Well Laser Diode

1992 ◽  
Author(s):  
S. Ogita ◽  
H. Kobayashi ◽  
T. Higashi ◽  
O. Aoki ◽  
N. Okazaki ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
High Efficiency ◽  
Quantum Well Laser ◽  
Multi Quantum Well

A 1.3-µm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K

2000 ◽  
Vol 39 (Part 2, No. 2A) ◽  
pp. L86-L87 ◽  
Author(s):  
Takeshi Kitatani ◽  
Kouji Nakahara ◽  
Masahiko Kondow ◽  
Kazuhisa Uomi ◽  
Toshiaki Tanaka
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Characteristic Temperature ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Improved Characteristic Temperature (TO) of a 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode Through Thermal Annealing

1999 ◽  
Vol 597 ◽  
Author(s):  
T. Kitatani ◽  
M. Kondow ◽  
K. Nakahara ◽  
K. Uomi ◽  
T. Tanaka
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Laser Diode ◽  
Continuous Wave ◽  
Characteristic Temperature ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Lasing Wavelength ◽  
Quantum Well Laser ◽  
Continuous Wave Operation

AbstractThrough optimal thermal annealing of the active region of a 1.3 μm GaInNAs/GaAs single-quantum-well laser diode, we obtained a characteristic temperature (T0) of 215 K under pulsed operation from 20°C to 80°C. This is the highest yet reported value for a 1.3-μm semiconductor laser. Even under continuous-wave operation, the T0 was as high as 147 K. The lasing-wavelength change with temperature was as small as 0.39 nm/°C, indicating the excellent stability for a GalnNAs laser diode with T0 of over 200 K. These results demonstrate that GaInNAs is a promising material for fabricating long-wavelength laser diodes used for opticalfiber communications.

Spectrum studies on a GaAs‐AlGaAs multi‐quantum‐well laser diode grown by molecular beam epitaxy

1983 ◽  
Vol 54 (5) ◽  
pp. 2692-2695 ◽  
Author(s):  
Hidetoshi Iwamura ◽  
Tadashi Saku ◽  
Hideki Kobayashi ◽  
Yoshiji Horikoshi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Laser Diode ◽  
Molecular Beam ◽  
Quantum Well Laser ◽  
Multi Quantum Well
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