The influence of channelling on radiation damage produced in silicon during ion bombardment

1967 ◽  
Vol 2 (3) ◽  
pp. 211-216 ◽  
Author(s):  
R. S. Nelson ◽  
D. J. Mazey
Keyword(s):  
Radiation Damage ◽  
Ion Bombardment

THE EFFECT OF CRYSTALLINITY AND BOMBARDMENT DOSE ON THE PENETRATION OF 40-keV XENON IONS IN IONIC CRYSTALS AND CERAMICS

1966 ◽  
Vol 44 (11) ◽  
pp. 2905-2914 ◽  
Author(s):  
J. L. Whitton ◽  
Hj. Matzke
Keyword(s):  
Radiation Damage ◽  
Single Crystals ◽  
Penetration Depth ◽  
Incident Beam ◽  
Ion Bombardment ◽  
Fused Silica ◽  
Ionic Crystals ◽  
Chemical Dissolution ◽  
Metal Single Crystals ◽  
Oriented Parallel

The range and depth distributions of 40-keV xenon ions in single crystals of NaCl, KBr, MgO, SiO2 (α quartz), in sintered UO2 and in fused silica, have been measured by the sectioning techniques of vibratory polishing and chemical dissolution. Channeling is observed in the single crystals when the [Formula: see text] is oriented parallel to the incident beam of the ions. This effect is similar to that previously reported for some metal single crystals. High bombardment doses produce a factor of 2–5 decrease in penetration depth in MgO and SiO2, materials which are known to be damaged by ion bombardment. This decrease is smaller in materials that do not show gross ion bombardment damage, such as NaCl, KBr, and UO2. Thus, the study of ranges is shown to be another means of detecting gross radiation damage.

scholarly journals Radiation damage by light- and heavy-ion bombardment of single-crystal LiNbO_3

2015 ◽  
Vol 5 (5) ◽  
pp. 1071 ◽  
Author(s):  
Hsu-Cheng Huang ◽  
Lihua Zhang ◽  
Girish Malladi ◽  
Jerry I. Dadap ◽  
Sandeep Manandhar ◽  
...  
Keyword(s):  
Single Crystal ◽  
Radiation Damage ◽  
Ion Bombardment ◽  
Heavy Ion

The incident angle effect on radiation damage and sputtering for low energy Ar+ion bombardment

1997 ◽  
Vol 142 (1-4) ◽  
pp. 369-383 ◽  
Author(s):  
H. J. Kang ◽  
J. H. Kim ◽  
J. C. Lee ◽  
D. W. Moon
Keyword(s):  
Radiation Damage ◽  
Incident Angle ◽  
Ion Bombardment ◽  
Low Energy ◽  
Angle Effect

scholarly journals Diffusion von Tritium in Quarz und Quarzglas

1967 ◽  
Vol 22 (6) ◽  
pp. 965-969
Author(s):  
Hj. Matzke
Keyword(s):  
Mass Transport ◽  
Diffusion Process ◽  
Radiation Damage ◽  
Volume Diffusion ◽  
Molecular Form ◽  
Ion Bombardment ◽  
Fused Silica ◽  
Kcal Mole ◽  
Crystalline Quartz ◽  
Diffusion Of Hydrogen

The release of tritium from single crystalline quartz and from fused silica has been measured following 40 keV ion bombardment to a dose of 4 × 1011 ions/cm2. The release can be explained by normal volume diffusion with D0=101±1 cm2 sec-1 for both materials and activation enthalpies of (42 ± 5) kcal/mole for quartz and (52 ± 5) kcal/mole for fused silica. Release from quartz is faster than release from fused silica. This latter diffusion process, however, is essentially slower than diffusion of hydrogen during permeation. Possible reasons for this discrepancy are the existence of radiation damage due to the ion bombardment or the chemical state of hydrogen which cause a different elementary process for mass transport: Hydrogen diffuses in molecular form during permeation whereas probably tritium atoms or ions will diffuse following ion bombardment.

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