Flux growth of some complex oxide materials

1972 ◽  
Vol 7 (7) ◽  
pp. 813-821 ◽  
Author(s):  
Barbara M. Wanklyn
Keyword(s):  
Complex Oxide ◽  
Flux Growth ◽  
Oxide Materials

FERROELECTRICS IN ACOUSTOELECTRONICS

Akustika ◽  
2021 ◽  
pp. 217
Author(s):  
Tamara Patrusheva ◽  
Sergey Petrov ◽  
Ludmila Drozdova ◽  
Aleksandr Shashurin
Keyword(s):  
Dielectric Constant ◽  
Electric Fields ◽  
Piezoelectric Effect ◽  
Complex Oxide ◽  
Ferroelectric Materials ◽  
Oxide Materials ◽  
Ferroelectric Films ◽  
Synthesis Time ◽  
Resonance Effects ◽  
Materials Used

Аcoustoelectronics is one of the areas of acoustics, associated with the use of mechanical resonance effects and the piezoelectric effect, as well as the effect based on the interaction of electric fields with waves of acoustic stresses in a piezoelectric material. The main materials used in acoustoelectronics are ferroelectrics, which are mainly complex oxide materials. This article discusses the possibility of increasing the purity and homogeneity of ferroelectric materials, as well as softening the regimes of their synthesis using the solution extraction-pyrolytic method. It is shown that the synthesis temperatures of BaTiO3, SrTiO3, and Pb(Zr)TiO3 ferroelectric films are reduced to 550-600°C, and the synthesis time is down to 5-10 minutes. The dielectric constant and Curie temperature values correspond to the maximum characteristics for these materials. Thus, using the extraction-pyrolytic method we obtained suitable for use in acoustoelectronic technology ferroelectric films.

Integration of PLZT and BST Family Oxides with GaN.

1999 ◽  
Vol 595 ◽  
Author(s):  
Andrei V. Osinsky ◽  
Vladimir N. Fuflyigin ◽  
Feiling Wang ◽  
Peter I. Vakhutinsky ◽  
Peter E. Norris
Keyword(s):  
Barium Strontium Titanate ◽  
Low Frequency ◽  
Complex Oxide ◽  
Oxide Materials ◽  
Lead Lanthanum Zirconate Titanate ◽  
High Quality ◽  
Lanthanum Zirconate ◽  
Uv Illumination ◽  
Barium Strontium ◽  
Bst Films

AbstractRecent advances in the processing of complex-oxide materials has allowed us to monolithically grow ferroelectrics of lead lanthanum zirconate titanate (PLZT) and barium strontium titanate (BST) systems on a GaN/sapphire structure. High quality films of PLZT and BST were grown on GaN/c-Al2O3 in a thickness range of 0.3-5 [.proportional]m by a solgel technique. Field-induced birefringence, as large as 0.02, was measured from a PLZT layer grown on a buffered GaN/sapphire structure. UV illumination was found to result in more symmetrical electrooptic hysteresis loop. BST films on GaN demonstrated a low frequency dielectric constant of up to 800 with leakage current density as low as 5.5.10−8 A/cm2.

scholarly journals Integration of PLZT and BST Family Oxides with GaN

2000 ◽  
Vol 5 (S1) ◽  
pp. 117-123
Author(s):  
Andrei V. Osinsky ◽  
Vladimir N. Fuflyigin ◽  
Feiling Wang ◽  
Peter I.Vakhutinsky ◽  
Peter E.Norris
Keyword(s):  
Barium Strontium Titanate ◽  
Low Frequency ◽  
Complex Oxide ◽  
Oxide Materials ◽  
Lead Lanthanum Zirconate Titanate ◽  
High Quality ◽  
Lanthanum Zirconate ◽  
Uv Illumination ◽  
Barium Strontium ◽  
Bst Films

Recent advances in the processing of complex-oxide materials has allowed us to monolithically grow ferroelectrics of lead lanthanum zirconate titanate (PLZT) and barium strontium titanate (BST) systems on a GaN/sapphire structure. High quality films of PLZT and BST were grown on GaN/c-Al2O3 in a thickness range of 0.3-5 µm by a solgel technique. Field-induced birefringence, as large as 0.02, was measured from a PLZT layer grown on a buffered GaN/sapphire structure. UV illumination was found to result in more symmetrical electrooptic hysteresis loop. BST films on GaN demonstrated a low frequency dielectric constant of up to 800 with leakage current density as low as 5.5⋅10−8A/cm2.

New complex-oxide materials Bi25.6Ba0.4Mo10–2yMe″2yO69–d: Synthesis and characteristics

2017 ◽  
Vol 90 (6) ◽  
pp. 853-861 ◽  
Author(s):  
Z. A. Mikhaylovskaya ◽  
E. S. Buyanova ◽  
S. A. Petrova ◽  
O. V. Russkikh ◽  
I. V. Nikolaenko
Keyword(s):  
Complex Oxide ◽  
Oxide Materials

Complex Oxide Materials

2012 ◽  
pp. 1179-1212
Author(s):  
Maria Varela ◽  
Timothy J. Pennycook ◽  
Jaume Gazquez ◽  
Albina Y. Borisevich ◽  
Sokrates T. Pantelides ◽  
...  
Keyword(s):  
Complex Oxide ◽  
Oxide Materials

Targeted Synthesis of Nanostructured Oxide Materials

2007 ◽  
Vol 1056 ◽  
Author(s):  
Greta Ricarda Patzke ◽  
Ying Zhou
Keyword(s):  
Hydrothermal Process ◽  
Kinetic Studies ◽  
Complex Oxide ◽  
Morphology Control ◽  
Oxide Materials ◽  
New Materials ◽  
Binary Oxides ◽  
Nanostructured Oxide ◽  
One Step ◽  
The One

ABSTRACTMorphology control is a key challenge in the straightforward hydrothermal production of technologically relevant anisotropic oxide materials. The use of readily available ionic additives as growth modifiers is discussed and compared for molybdenum- and tungsten oxide-based systems, and it is extended upon the formation of ternary W/Mo-oxides. Generally, the one-step hydrothermal synthesis of ternary and higher oxides is an important goal, because their properties often outperform those of the binary oxides. This holds especially for the Bi2O3-MoO3-VOx (BIMOVOx) system as a rich source of new materials. We present a new solution-based approach to α-Bi2O3 nanobelts starting from commercial Bi2O3 and K2SO4 as a key step on the way to anisotropic BIMOVOx-oxides. This hydrothermal process is an illustrative example of highly selective and efficient morphology control through an inorganic additive. As mechanistic and kinetic studies are crucial for the design of complex oxide nanomaterials, the Bi2O3-K2SO4 system is compared to our previous studies on Mo-, W- and V-oxides with respect to its hydrothermal parameter window and robustness.

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