Study of low-frequency relaxation phenomena in thin-film capacitors

1976 ◽  
Vol 31 (6) ◽  
pp. 401-430 ◽  
Author(s):  
W. Wilde ◽  
G. Mey
Keyword(s):  
Thin Film ◽  
Low Frequency ◽  
Relaxation Phenomena ◽  
Thin Film Capacitors ◽  
Frequency Relaxation

Low-Frequency Relaxation Phenomena in α-LiIO3: The Nature and Role of Defects

2002 ◽  
Vol 168 (1) ◽  
pp. 76-84 ◽  
Author(s):  
Y. Mugnier ◽  
C. Galez ◽  
J.M. Crettez ◽  
P. Bourson ◽  
C. Opagiste ◽  
...  
Keyword(s):  
Low Frequency ◽  
Relaxation Phenomena ◽  
Frequency Relaxation

Low-frequency dielectric relaxation of BaTiO3 thin-film capacitors

1999 ◽  
Vol 75 (12) ◽  
pp. 1784-1786 ◽  
Author(s):  
Su-Jae Lee ◽  
Kwang-Yong Kang ◽  
Seok-Kil Han
Keyword(s):  
Thin Film ◽  
Dielectric Relaxation ◽  
Low Frequency ◽  
Thin Film Capacitors ◽  
Batio3 Thin Film

Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric

2009 ◽  
Vol 105 (12) ◽  
pp. 124504 ◽  
Author(s):  
S. L. Rumyantsev ◽  
Sung Hun Jin ◽  
M. S. Shur ◽  
Mun-Soo Park
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film

Investigating the dielectric properties and low-frequency relaxation process of TlGaSe2 crystals

2017 ◽  
Vol 31 (12) ◽  
pp. 1750134 ◽  
Author(s):  
Oktay Samadov ◽  
Oktay Alakbarov ◽  
Arzu Najafov ◽  
Samir Samadov ◽  
Nizami Mehdiyev ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Relaxation Time ◽  
Constant Electric Field ◽  
Low Frequency ◽  
Constant Field ◽  
Impedance Spectra ◽  
Ionic Contribution ◽  
Frequency Relaxation ◽  
Average Relaxation Time ◽  
Diagram Analysis

The dielectric and impedance spectra of TlGaSe2 crystals have been studied at temperatures in the 100–500 K range in the alternating current (AC [Formula: see text]1 V). It has been shown that the conductivity of TlGaSe2 crystals is mainly an ionic characteristic at temperatures above 400 K. The well-defined peak at the frequency dependence of the imaginary part of impedance [Formula: see text] is observed in the 215–500 K temperature range. In a constant field, there occurs a significant decrease in electrical conductivity [Formula: see text] in due course. The ionic contribution to conductivity (76% at [Formula: see text]) has been estimated from a kinetic change in electrical conductivity [Formula: see text] under the influence of a constant electric field. The diagram analysis in a complex plane [Formula: see text] has been conducted by applying the method of an equivalent circuit of the substation. It has been determined that the average relaxation time of the electric module of the sample is [Formula: see text].

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