Preparation and optical properties of phase-change VO2 thin films

1993 ◽  
Vol 28 (8) ◽  
pp. 2169-2177 ◽  
Author(s):  
Songwei Lu ◽  
Lisong Hou ◽  
Fuxi Gan
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Phase Change ◽  
Vo2 Thin Films

Optical Properties and Phase Transformation Kinetics of Ge-Sb-Te-(N) Alloy Thin Films Investigated by Ellipsometry

2003 ◽  
Vol 803 ◽  
Author(s):  
Sang Youl Kim
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Optical Properties ◽  
Phase Change ◽  
Crystallization Behavior ◽  
Ex Situ ◽  
Recent Analysis ◽  
Avrami Equation ◽  
Step Process ◽  
Kinetics Of

ABSTRACTThe recent research works of optical properties and crystallization kinetics of phase change Ge-Sb-Te-(N) alloy by using ellipsometry are reviewed.The complex refractive index spectra of phase-change Ge2Sb2+xTe5 thin films and those of the nitrogen Ge2Sb2Te5 thin films have been determined.The crystallization behavior of amorphous Ge2Sb2Te5 thin films investigated by in situ ellipsometry revealed that the crystallization process of Ge2Sb2Te5 near 140°C is a two-step process. The kinetic exponent of the Johnson-Mehl-Avrami equation was about 4.4 for the first stage and 1.1 for the second stage. Ex situ study confirmed the cascaded crystallization behavior of phase-change Ge2Sb2Te5 films.A passive type single wavelength ellipsometer adopting a DOAP (division-of-amplitude photopolarimeter) configuration with nanosecond time resolution is developed to monitor the phase transformation of Ge2Sb2Te5 caused by a high power nanosecond laser pulse in real time. The two-step process - the fast nucleation-dominant stage followed by the slow anomalous grain growth stage is confirmed.Based on the recent analysis of the ellipsometric isotherm at moderately elevated temperature, we found for the first time that the fast nucleation dominant crystallization of Ge2Sb2Te 5 can be better explained by a modified JMA equation that illustrates the nucleation dominated process where the creation rate of a new nucleus is proportional to the density of preexisting nuclei and growth rate is negligible.

Optical properties and structure of Sb-rich AgInSbTe phase change thin films

2004 ◽  
Vol 14 (1) ◽  
pp. 218-222 ◽  
Author(s):  
Zhang Guang-Jun ◽  
Gu Dong-Hong ◽  
Gan Fu-Xi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Phase Change

scholarly journals Optical Properties of Amorphous and Crystalline GeTe Nanoparticle Thin Films: A Phase-Change Material for Tunable Photonics

2020 ◽  
Vol 3 (5) ◽  
pp. 4314-4320
Author(s):  
Ann-Katrin U. Michel ◽  
Marilyne Sousa ◽  
Maksym Yarema ◽  
Olesya Yarema ◽  
Vladimir Ovuka ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Phase Change ◽  
Phase Change Material ◽  
Change Material

Influence of laser-irradiation on structural and optical properties of phase change Ga25Se75−xTex thin films

2013 ◽  
Vol 92 ◽  
pp. 424-426 ◽  
Author(s):  
F.A. Al-Agel ◽  
Shamshad A. Khan ◽  
E.A. Al-Arfaj ◽  
F.M. Al-Marzouki ◽  
A.A. Al-Ghamdi ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Phase Change ◽  
Laser Irradiation ◽  
Structural And Optical Properties

Influence of the conditions of pulsed laser deposition on the structural, electrical, and optical properties of VO2 thin films

2015 ◽  
Vol 49 (5) ◽  
pp. 563-569 ◽  
Author(s):  
O. A. Novodvorsky ◽  
L. S. Parshina ◽  
O. D. Khramova ◽  
V. A. Mikhalevsky ◽  
K. D. Shcherbachev ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Electrical And Optical Properties ◽  
Vo2 Thin Films
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