Research in real time of some thermal and mass growth parameters of BGO and BSO crystals during the Czochralski process with weight diameter control

1996 ◽  
Vol 31 (1) ◽  
pp. 209-213 ◽  
Author(s):  
V. L. Tassev
Keyword(s):  
Real Time ◽  
Growth Parameters ◽  
Mass Growth ◽  
Diameter Control ◽  
Czochralski Process

Real-Time Analysis Of In-Situ Spectroscopic Ellipsometric Data During Mbe Growth Of III-V Semiconductors

1991 ◽  
Vol 222 ◽  
Author(s):  
B. Johs ◽  
J. L. Edwards ◽  
K. T. Shiralagi ◽  
R. Droopad ◽  
K. Y. Choi ◽  
...  
Keyword(s):  
Real Time ◽  
Optical Constants ◽  
Growth Parameters ◽  
Ex Situ ◽  
Time Analysis ◽  
Mbe Growth ◽  
In Situ Data ◽  
Real Time Analysis

ABSTRACTA modular spectroscopic ellipsometer, capable of both in-situ and ex-situ operation, has been used to measure important growth parameters of GaAs/AIGaAs structures. The ex-situ measurements provided layer thicknesses and compositions of the grown structures. In-situ ellipsometric measurements allowed the determination of growth rates, layer thicknesses, and high temperature optical constants. By performing a regression analysis of the in-situ data in real-time, the thickness and composition of an AIGaAs layer were extracted during the MBE growth of the structure.

High Efficiency of Lutetium Silicate Scintillators, Ce-Doped LPS and LYSO Crystals for Medical Applications

2007 ◽  
Vol 555 ◽  
pp. 371-376 ◽  
Author(s):  
L. Pidol ◽  
Bruno Viana ◽  
Aurelie Bessière ◽  
A. Galtayries ◽  
P. Dorenbos ◽  
...  
Keyword(s):  
High Efficiency ◽  
Growth Parameters ◽  
Energy Levels ◽  
Light Yield ◽  
Fast Response ◽  
Good Energy Resolution ◽  
Scintillation Light ◽  
Time Resolved ◽  
Good Energy ◽  
Czochralski Process

The paper presents two cerium doped lutetium silicate crystals: pyrosilicate Ce:Lu2Si2O7 (LPS) and Ce: Lu2(1-x)Y2xSiO5 (LYSO). These two crystals exhibit the expected requirements for gamma detection: high density and high atomic number, high scintillation light yield, good energy resolution and fast response. LPS and LYSO crystals doped with cerium were grown by the Czochralski process. The crystal growth parameters were studied and optimized. Development of scintillators requires good understanding of the scintillation process. The location within the forbidden band gap of the localized lanthanide energy levels is analyzed by time resolved spectroscopy and thermoluminescence studies.

scholarly journals Estimating Morphological Features of Plant Growth Using Machine Vision

2019 ◽  
Vol 10 (3) ◽  
pp. 30-53
Author(s):  
Himanshu Gupta ◽  
Roop Pahuja
Keyword(s):  
Plant Growth ◽  
Machine Vision ◽  
Real Time ◽  
Growth Parameters ◽  
Vision System ◽  
Digital Camera ◽  
Vital Role ◽  
Morphological Features ◽  
Virtual Instrumentation ◽  
Effective Use

Motivated by the fact that human visionary intelligence plays a vital role in guiding many of the agriculture practices, this article represents an effective use of machine vision technology for estimating plant morphological features to ascertain its growth and health conditions. An alternative to traditional, manual and time-consuming testing methods of plant growth parameters, a novel online plant vision system is proposed and developed on the platform of virtual instrumentation. Deployed in real time, the system acquires plant images using digital camera and communicates the raw image to host PC on Wi-Fi network. The dedicated application software with plant user interface, effective image processing and analysis algorithms, loads the plant images, extracts and estimates certain morphological features of the plant such as plant height, leaf area, detection of flower onset and fall foliage. The system was tested and validated under real-time conditions using different plants and leaves. Further, the performance of the system was statistically analysed to show promising results.

Real-time Monitoring of semiconductor growth by Spectroscopic ellipsometry

1997 ◽  
Vol 502 ◽  
Author(s):  
B. Johs ◽  
J. Hale ◽  
C. Herzinger ◽  
D. Doctor ◽  
K. Elliott ◽  
...  
Keyword(s):  
Data Analysis ◽  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Growth Parameters ◽  
High Surface ◽  
Buffer Layers ◽  
Ex Situ ◽  
Angle Of Incidence ◽  
Time Layer ◽  
Analysis Strategies

ABSTRACTin situ Spectroscopic Ellipsometry (SE) is an optical technique which is well suited for the monitoring of epitaxial semiconductor growth, due to its high surface sensitivity and non-invasive nature. In this work, SE systems were installed on both MBE and MOCVD deposition systems to monitor the epitaxial growth of InxGa1−xAs and InxAl1−xAs compounds on InP substrates. The structures grown include thick lattice matched In0.53Ga0.47As buffer layers (for HBT collectors), and strained RTD structures. SE was used to monitor in real-time layer composition and thickness during growth. To enhance the precision and accuracy of the SE determined growth parameters, it was necessary to optimize the SE data analysis strategies. A methodology to determine the best spectral region for the SE data analysis in the presence of noise and systematic effects (such as angle of incidence uncertainty, detector wavelength shifts, surface roughness, uncertainty in surface temperature, non-ideal growth modes, etc.) is presented. Using the optimized data analysis strategies, long term SE-determined InxGa1−�As composition accuracy (as verified by ex situ x-ray measurements) of ±0.002 in ‘x’ was achieved. SE thickness measurements of ultra-thin (<30Å) strained AlAs barrier layers were also in excellent agreement (±0.5Å) with real-time photo-emission oscillation measurements.

Some Recent Results in Quiescent Prominence Spectrometry

1979 ◽  
Vol 44 ◽  
pp. 41-47
Author(s):  
Donald A. Landman
Keyword(s):  
Real Time ◽  
Computer System ◽  
Spectral Response ◽  
Absolute Intensity ◽  
Solar Observatory ◽  
Target Size ◽  
Small Target ◽  
Signal Averaging ◽  
Quiescent Prominence

This paper describes some recent results of our quiescent prominence spectrometry program at the Mees Solar Observatory on Haleakala. The observations were made with the 25 cm coronagraph/coudé spectrograph system using a silicon vidicon detector. This detector consists of 500 contiguous channels covering approximately 6 or 80 Å, depending on the grating used. The instrument is interfaced to the Observatory’s PDP 11/45 computer system, and has the important advantages of wide spectral response, linearity and signal-averaging with real-time display. Its principal drawback is the relatively small target size. For the present work, the aperture was about 3″ × 5″. Absolute intensity calibrations were made by measuring quiet regions near sun center.

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