Effects of the deposition temperature on the resistivity of copper films produced by low-pressure metal-organic chemical vapour deposition on a TiN barrier layer

1995 ◽  
Vol 30 (8) ◽  
pp. 2029-2034 ◽  
Author(s):  
S. S. Yoon ◽  
J. S. Min ◽  
J. S. Chun
Keyword(s):  
Chemical Vapour Deposition ◽  
Barrier Layer ◽  
Deposition Temperature ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Organic Chemical ◽  
Copper Films ◽  
Metal Organic

The Effects of Deposition temperature on the Growth of Copper films produced by low pressure metal-organic chemical vapour deposition

1995 ◽  
Vol 391 ◽  
Author(s):  
S.S. Yoon ◽  
S.W. Kang ◽  
S.S. Chun
Keyword(s):  
Chemical Vapour Deposition ◽  
Deposition Temperature ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Organic Chemical ◽  
Copper Films ◽  
Cross Sectional ◽  
Initial Stage ◽  
Metal Organic

AbstractCopper was deposited onto TiN by low pressure metal-organic chemical vapour deposition, using hfacCu(I)TMVS and argon carrier gas. The effects of the deposition temperature on the growth of copper films were investigated by observing the surface morphology and the cross sectional morphology of copper films. At the initial stage of growth, copper films tended to have the island-like growth mode, irrespective of the deposition temperatures. It was also observed that the aspect ratio(=height to width) of the islands gradually increased as the deposition temperature increased. The poorer movability of the copper atoms at the higher deposition temperature was evaluated on the basis of hindering effect by the following copper deposits.

Epitaxial growth of gallium arsenide prepared by low-pressure metal-organic chemical vapour deposition at low temperatures

1992 ◽  
Vol 70 (10-11) ◽  
pp. 893-897
Author(s):  
C. Aktik ◽  
J. Beerens ◽  
S. Blain ◽  
A. Bsiesy
Keyword(s):  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Deep Level ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Organic Chemical ◽  
Carbon Incorporation ◽  
Metal Organic

The low-pressure metal-organic chemical vapour deposition (LPMOCVD) technique has been investigated previously as a growth method for compound semiconductors, offering the possibility of selective epitaxy and the potential advantage of better controllability for changing the doping level and the alloy composition. Low-temperature growth is also desirable to reduce the carbon incorporation generated by the decomposition of the organic radicals. In this article we report for the first time the epitaxial growth of gallium arsenide (GaAs) by LPMOCVD at temperatures as low as 510 °C. The vertical reactor that was developed by the authors employs conventional precursors such as trimethylgallium and arsine. By carefully choosing the growth parameters, we were able to grow high-quality GaAs epilayers with good surface morphology at temperatures as low as 510 °C. The carbon incorporation is shown to decrease with decreasing growth temperature without deterioration of the film quality. By carefully controlling the purity of the sources and the gas flow dynamics, we reduced the deep level impurity concentration and obtained reproducible n-type material with residual net donor concentration of 4.4 × 1014 cm−3 and mobility of 92 000 cm2 V−1 s−1 at 77 K.

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