A new system of photon-gated persistent spectral hole burning material for frequency-domain optical storage

1993 ◽  
Vol 56 (4) ◽  
pp. 235-237 ◽  
Author(s):  
Zhonglin Zhang ◽  
Luqing Shi ◽  
Jun Xie ◽  
K. Horie ◽  
Shaoming Yao ◽  
...  
Keyword(s):  
Frequency Domain ◽  
Optical Storage ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Spectral Hole ◽  
New System

Technological aspects of frequency domain data storage using persistent spectral hole burning

1986 ◽  
Vol 25 (18) ◽  
pp. 3207 ◽  
Author(s):  
Franklin M. Schellenberg ◽  
Wilfried Lenth ◽  
Gary C. Bjorklund
Keyword(s):  
Frequency Domain ◽  
Data Storage ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Spectral Hole

A study on multiple photon-gated persistent spectral hole burning and photoproduct in a system of frequency-domain storage material

1995 ◽  
Vol 64 (1-6) ◽  
pp. 161-165 ◽  
Author(s):  
Youyuan Zhao ◽  
Yongle Pan ◽  
Yu Yin ◽  
Lingbing Chen ◽  
Ruisheng Wang ◽  
...  
Keyword(s):  
Frequency Domain ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Storage Material ◽  
Spectral Hole

Exploring the limits of optical storage using persistent spectral hole-burning: holographic recording of 12000 images

1998 ◽  
Vol 66 (1) ◽  
pp. 67-74 ◽  
Author(s):  
B. Plagemann ◽  
F.R. Graf ◽  
S.B. Altner ◽  
A. Renn ◽  
U.P. Wild
Keyword(s):  
Optical Storage ◽  
Holographic Recording ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Spectral Hole

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Hole Burning ◽  
Band Offset ◽  
Spectral Hole Burning ◽  
Type Ii ◽  
Thermally Stable ◽  
Spectral Hole

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

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