Determination of diffusion induced concentration profiles in Cr2O3 films on ceramic Al2O3 by Auger sputter depth profiling

1995 ◽  
Vol 353 (5-8) ◽  
pp. 533-535 ◽  
Author(s):  
U. Rothhaar ◽  
H. Oechsner
1981 ◽  
Vol 11 ◽  
Author(s):  
Patrick Trocellier ◽  
Bernard Nens ◽  
Charles Engelmann

The Rutherford backscattering technique is useful for the determination of the concentration profiles of some heavy elements in the near surface region of glasses, but is not able to provide chemical information on the elements detected.


Author(s):  
Tobias Förster ◽  
Artur Blivernitz

AbstractThis work describes a newly introduced experimental procedure to quantify the diffusion progress of mineral oils locally resolved in NBR. Diffusion of reference oils IRM 901, IRM 902 and IRM 903 in NBR with various acrylonitrile contents was investigated. Classical sorption experiments were performed as a basic characterization and compared to the newly introduced method. Here, elastomer specimens are only being dipped with the bottom in a relatively small reservoir of mineral oil. This provides a determination of locally resolved concentration profiles of mineral oils, and the calculation of diffusion coefficients. These diffusion coefficients follow the same trends like those determined via sorption experiments. Despite differences in the absolute numbers, activation energies of diffusion can be applied as a suitable measure for the compatibility of elastomers and fluids.


2015 ◽  
Vol 48 (2) ◽  
pp. 73-81 ◽  
Author(s):  
Henrique Duarte Alvarenga ◽  
Nele Van Steenberge ◽  
Chris Xhoffer ◽  
Patrick Steegstra ◽  
Jilt Sietsma ◽  
...  

2000 ◽  
Vol 650 ◽  
Author(s):  
Te-Sheng Wang ◽  
A.G. Cullis ◽  
E.J.H. Collart ◽  
A.J. Murrell ◽  
M.A. Foad

ABSTRACTBoron is the most important p-type dopant in Si and it is essential that, especially for low energy implantation, both as-implanted B distributions and those produced by annealing should be characterized in very great detail to obtain the required process control for advanced device applications. While secondary ion mass spectrometry (SIMS) is ordinarily employed for this purpose, in the present studies implant concentration profiles have been determined by direct B imaging with approximately nanometer depth and lateral resolution using energy-filtered imaging in the transmission electron microscopy. The as-implanted B impurity profile is correlated with theoretical expectations: differences with respect to the results of SIMS measurements are discussed. Changes in the B distribution and clustering that occur after annealing of the implanted layers are also described.


2015 ◽  
Vol 67 (2) ◽  
pp. 379-381 ◽  
Author(s):  
M. Higaki ◽  
T. Otsuka ◽  
K. Tokunaga ◽  
K. Hashizume ◽  
K. Ezato ◽  
...  

Author(s):  
Daniel J. Lyons ◽  
Jamie L. Weaver ◽  
Anne C. Co

Li distribution within micron-scale battery electrode materials is quantified with neutron depth profiling (NDP). This method allows the determination of intra- and inter-electrode parameters such as lithiation efficiency, electrode morphology...


2012 ◽  
Vol 323-325 ◽  
pp. 289-294
Author(s):  
Patrice Berthod ◽  
Lionel Aranda

Thermogravimetry measurements associated to concentration profiles allow determining a diffusion coefficient at high temperature of the most oxidable one among the metallic elements belonging to the chemical composition of an alloy. In this work the employed method is described and applied to chromia-forming alloys essentially based on nickel but also to selected cobalt-based and iron-based alloys. More precisely DCrvalues were estimated for chromium diffusing through the carbide-free zones developed during high temperature oxidation. The effects of the base element, of the chromium carbides density and of the dendritic orientations on the chromium diffusion were evidenced.


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