Determination of lead concentration and film thickness in electroluminescent calcium sulfide thin films by X-ray fluorescence

1993 ◽  
Vol 346 (6-9) ◽  
pp. 608-611 ◽  
Author(s):  
Sari Lehto ◽  
Lauri Niinist� ◽  
Inkeri Yliruokanen
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Lead Concentration ◽  
Calcium Sulfide ◽  
X Ray

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

Crystal structure determination of solar cell materials: Cu2ZnSnS4 thin films using X-ray anomalous dispersion

2012 ◽  
Vol 524 ◽  
pp. 22-25 ◽  
Author(s):  
Hiroshi Nozaki ◽  
Tatsuo Fukano ◽  
Shingo Ohta ◽  
Yoshiki Seno ◽  
Hironori Katagiri ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Solar Cell ◽  
Structure Determination ◽  
Anomalous Dispersion ◽  
Crystal Structure Determination ◽  
X Ray

Determination of dopant concentration in co-deposited organic thin films by using RBS and X-ray fluorescence combined techniques

2013 ◽  
Vol 35 (12) ◽  
pp. 2440-2443 ◽  
Author(s):  
Y.A. Paredes ◽  
E.G. Gravina ◽  
M.D. Barbosa ◽  
R. Machado ◽  
W.G. Quirino ◽  
...  
Keyword(s):  
Thin Films ◽  
Dopant Concentration ◽  
Organic Thin Films ◽  
X Ray

A practical method for determining film thickness using X-ray absorption spectroscopy in total electron yield mode

2021 ◽  
Vol 28 (6) ◽  
Author(s):  
Noritake Isomura ◽  
Keiichiro Oh-ishi ◽  
Naoko Takahashi ◽  
Satoru Kosaka
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Absorption Spectroscopy ◽  
Electron Spectroscopy ◽  
Practical Method ◽  
Decay Length ◽  
Total Electron ◽  
X Ray ◽  
Logarithmic Equation ◽  
X Ray Absorption

Thin films formed on surfaces have a large impact on the properties of materials and devices. In this study, a method is proposed using X-ray absorption spectroscopy to derive the film thickness of a thin film formed on a substrate using the spectral separation and logarithmic equation, which is a modified version of the formula used in electron spectroscopy. In the equation, the decay length in X-ray absorption spectroscopy is longer than in electron spectroscopy due to a cascade of inelastic scattering of electrons generated in a solid. The modification factor, representing a multiple of the decay length, was experimentally determined using oxidized Si and Cu with films of thickness 19 nm and 39 nm, respectively. The validity of the proposed method was verified, and the results indicated that the method can be used in the analysis of various materials with thin films.

Determination of Thickness of Multiple Layer Thin Films by X-ray Diffraction Technique

1995 ◽  
Vol 39 ◽  
pp. 637-643
Author(s):  
J. Chaudhuri ◽  
F. Hashmi
Keyword(s):  
Thin Films ◽  
Diffraction Theory ◽  
Scanning Electron Microscopy Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Multiple Layer ◽  
Crystal Model ◽  
Microscopy Data ◽  
Secondary Extinction

In this study, the equations based on x-ray diffraction theory were developed to determine the thickness of multiple layer thin films. The kinematical expression of the integrated reflected intensity from the substrate and films was corrected for the primary and secondary extinction effects assuming a mosaic crystal model. As an example of the application of the method, thicknesses of a double heterostructure system, namely AlAs/AIGaAs/GaAs, were determined. Good agreement was obtained between the results from the x-ray measurement and scanning electron microscopy data demonstrating high precision of this technique.

High Accuracy Analysis of BPSG Thin Films on Silicon Wafers by X-Ray Wafer Analyzer

1993 ◽  
Vol 37 ◽  
pp. 229-234 ◽  
Author(s):  
H. Kohno ◽  
T. Arai ◽  
Y. Araki ◽  
R. Wilson
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Semiconductor Industry ◽  
High Accuracy ◽  
Metallic Alloys ◽  
Accuracy Analysis ◽  
Accurate Analysis ◽  
X Ray ◽  
The Past ◽  
Boron Doped

The wafer analyzer has been used to fulfil many applications needs in the semiconductor industry. The prominent features of the XRF method for the semiconductor industry are:analysis of many types of films, e.g., oxides, silicides and metallic alloys, and simultaneous analysis of film thickness and compositions.In the past, the analysis results of BPSG (Boron-doped Phospho-Silicate Glass) films, with thicknesses greater than 4000 Å, were reported. With the recent increased demand for larger scale and higher quality semiconductor devices (larger than 64 Mbit), more accurate analysis with high precision has been required.

Determination of Ultra-Thin Carbon Coating Thickness by X-ray Fluorescence Technique

1988 ◽  
Vol 32 ◽  
pp. 331-339
Author(s):  
R. L. White ◽  
T. C. Huang
Keyword(s):  
Film Thickness ◽  
Carbon Coating ◽  
Layer Structure ◽  
Carbon Film ◽  
Calibration Procedure ◽  
High Precision Measurement ◽  
X Ray ◽  
Thin Carbon ◽  
Counting Time

AbstractA tcchniquc for high-precision measurement of carbon thin-film thickness using X-ray fluorescence (XRF) is described. A quadratic calibration procedure is used for carbon thin films on silicon. Measurement of carbon-film thickness in a double-layer structure of carbon and CoCrX alloy is complicated by interference effects from the underlying layer. The dependence of the relative precision in measuring thickness (σT/T) on the counting time has been derived. It shows that a precision of 2% for a 25-nm carbon coating can be obtained using a W/C crystal and counting time of 4 minutes. Intensity and resolution advantages provided by the recently developed Ni/C and V/C multilayer synthetic crystals are also described.

Grazing-incidence X-Ray Analysis of Surfaces and Thin Films

1991 ◽  
Vol 35 (A) ◽  
pp. 143-150 ◽  
Author(s):  
T. C. Huang
Keyword(s):  
Thin Films ◽  
Depth Profiling ◽  
Grazing Incidence ◽  
Bragg Diffraction ◽  
Interface Roughness ◽  
Phase Identification ◽  
X Ray ◽  
Types Of Information

AbstractGrazing-incidence X-ray analysis techniques which are commonly used for the nondestructive characterization of surfaces and thin films are reviewed. The X-ray reflectivity technicue is used to study surface uniformity and oxidation, layer thickness and density, interface roughness and diffusion, etc. The grazing-incidence in-plane diffraction technique is used to determine in-plane crystallography of epitaxial films. The grazing-incidence asymmetric-Bragg diffraction is used for surface phase identification and structural depth profiling determination of polycrystalline films. Typical examples to illustrate the types of information that can be obtained by the techniques are presented.

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