The effect of oxygen in WN x films on thermal stability of WN x /GaAs interfaces

1993 ◽  
Vol 4 (3) ◽  
pp. 197-199 ◽  
Author(s):  
D. Gregušová ◽  
T. Lalinský ◽  
ž. Mozolová ◽  
J. Breza ◽  
P. Vogrinčič
Keyword(s):  
Thermal Stability ◽  
Effect Of Oxygen ◽  
Thermal Stability Of

The effect of oxygen on the thermal stability of Si1−xGexstrained layers

1991 ◽  
Vol 58 (14) ◽  
pp. 1536-1538 ◽  
Author(s):  
D. B. Noble ◽  
J. L. Hoyt ◽  
W. D. Nix ◽  
J. F. Gibbons ◽  
S. S. Laderman ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Effect Of Oxygen ◽  
Thermal Stability Of

Effect of oxygen concentration on the thermal stability of magnetron sputtered amorphous Ta–Ni thin films

2012 ◽  
Vol 520 (6) ◽  
pp. 2356-2361 ◽  
Author(s):  
Hua Yan ◽  
Raissa Nathania Santoso ◽  
Yueyue Jiang ◽  
Meng Heng Liang ◽  
Zhong Chen
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Oxygen Concentration ◽  
Effect Of Oxygen ◽  
Thermal Stability Of

Effect of oxygen content on thermal stability of grain size for nanocrystalline Fe10Cr and Fe14Cr4Hf alloy powders

2017 ◽  
Vol 720 ◽  
pp. 510-520 ◽  
Author(s):  
Peiman Shahbeigi Roodposhti ◽  
Mostafa Saber ◽  
Carl Koch ◽  
Ronald Scattergood ◽  
Sina Shahbazmohamadi
Keyword(s):  
Thermal Stability ◽  
Grain Size ◽  
Oxygen Content ◽  
Effect Of Oxygen ◽  
Thermal Stability Of

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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