The g-factor of conduction electrons in Cd3P2 at low temperatures

1979 ◽  
Vol 35 (1-2) ◽  
pp. 1-7 ◽  
Author(s):  
Amir A. Lakhani ◽  
J. -P. Jay-Gerin
Keyword(s):  
Low Temperatures ◽  
G Factor ◽  
Conduction Electrons

The specific heat of metals and alloys at low temperatures

1957 ◽  
Vol 240 (1222) ◽  
pp. 321-332 ◽  
Keyword(s):  
Fermi Surface ◽  
Specific Heat ◽  
Liquid Helium ◽  
Brillouin Zone ◽  
Low Temperatures ◽  
Metals And Alloys ◽  
Thermal Excitation ◽  
Electronic Specific Heat ◽  
Conduction Electrons ◽  
Elastic Shear

The effect of thermal excitation of the conduction electrons on the elastic shear constants is investigated in a metal in which the Fermi surface lies close to the Brillouin-zone boundaries. It is shown that in these circumstances electron-lattice interaction leads to an addi­tional term in the specific heat, linear in the temperature in the liquid-helium range, which, therefore, augments the pure electronic specific heat. The variation in magnitude of this linear term is considered in the α-brasses. It is suggested that this is the physical effect underlying the peculiarities of the ‘electronic’ specific heat of these alloys.

scholarly journals The contribution to the electrical resistance of metals from collisions between electrons

1937 ◽  
Vol 158 (894) ◽  
pp. 383-396 ◽  
Keyword(s):  
Electrical Resistance ◽  
Low Temperatures ◽  
Characteristic Temperature ◽  
Lattice Vibrations ◽  
Debye Characteristic Temperature ◽  
Conduction Electrons ◽  
Simplifying Assumptions

The theory of electrical resistance developed by Bloch and others reats the conduction electrons as moving independently of one another but interacting with the lattice vibrations. The theory gives for the resistance of a metal, subject to certain simplifying assumptions, the formula R = const. G (ʘ/T) G ( x ) = 5/x 5 ∫ x o ξ 4 dξ/e ξ -1 - 1/e x -1, (1) where ʘ is the Debye characteristic temperature. At low temperatures formula (1) leads to the conclusion that R varies as T 5 . The function G ( x ) was first proposed by Grüneisen.

The thermal conductivity of metals

1938 ◽  
Vol 34 (3) ◽  
pp. 474-497 ◽  
Author(s):  
R. E. B. Makinson
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Low Temperatures ◽  
Thermal Equilibrium ◽  
Major Part ◽  
Lattice Energy ◽  
Conduction Electrons ◽  
Electronic Heat ◽  
Lattice Waves ◽  
Lattice Heat

The methods used to measure separately the electronic and lattice heat conductivities κeand κgin a metal are reviewed, and it is pointed out that care is necessary in interpreting the results in view of the underlying assumptions. The equations given by Wilson for κeand for the electrical conductivity σ are used to plot the theoretical values of the electronic Lorentz ratioLe= κe/σTas a function ofT, both for the monovalent metals and for a model metal with 1·8 × 10−2conduction electrons per atom, which is taken to represent bismuth sufficiently accurately for this purpose. Curves for κeand κgas functions ofTare given in both cases, and these, together with a comparison of the observed Lorentz ratio andLe, show that in the monovalent metals κgis unimportant at any temperature, but in bismuth it plays a major part at low temperatures, in agreement with experimental conclusions. Quantitatively the agreement is good for copper and, as far as the calculations go, reasonable for bismuth.Scattering of lattice waves at the boundaries of single crystals (including insulators) at temperatures of a few degrees absolute is shown to be consistent with the experiments of de Haas and Biermasz on KCl and to be responsible for the rise in thermal resistance in this region as suggested by Peierls.The assumption in the theory of electronic heat conduction that the lattice energy distribution function has its thermal equilibrium value is examined in an appendix. The conclusion is that it should be satisfactory, though the proof of this given by Bethe is seen to be inadequate.

g-factor anisotropy of conduction electrons in InSb

1985 ◽  
Vol 31 (12) ◽  
pp. 7989-7994 ◽  
Author(s):  
Y.-F. Chen ◽  
M. Dobrowolska ◽  
J. K. Furdyna
Keyword(s):  
G Factor ◽  
Conduction Electrons

The relaxation time of conduction electrons in the noble met

1963 ◽  
Vol 275 (1361) ◽  
pp. 209-217 ◽  
Keyword(s):  
Electrical Conductivity ◽  
Relaxation Time ◽  
Boltzmann Equation ◽  
Fermi Surface ◽  
Low Temperatures ◽  
Lattice Vibrations ◽  
Thermo Electric ◽  
Multiply Connected ◽  
Conduction Electrons ◽  
Experimental Values

The Boltzmann equation for scattering by impurities and lattice vibrations is solved numerically for a metal having a multiply-connected Fermi surface. It is found that the relaxation time for scattering by lattice vibrations at high temperatures or by impurities is approximately constant over the Fermi surface. For scattering by lattice vibrations at low temperatures the relaxation time is highly anisotropic. These results are consistent with the experimental values of the electrical conductivity but cannot predict a positive thermo ­ electric power.

The theory of electronic conduction in polar semi-conductors

1953 ◽  
Vol 219 (1136) ◽  
pp. 53-74 ◽  
Keyword(s):  
Electrical Conductivity ◽  
Boltzmann Equation ◽  
Low Temperatures ◽  
Electron Gas ◽  
Electronic Conduction ◽  
Scattering Process ◽  
Thermo Electric ◽  
Conduction Electrons ◽  
The Boltzmann Equation ◽  
Set Up

The Boltzmann equation is set up for the conduction electrons in a crystal in which the scattering is due to the polarization waves of the lattice, and it is pointed out that at low temperatures it is impossible to define a unique time of relaxation for the scattering process. The Boltzmann equation is solved by means of a variational method, and exact expressions for the electrical conductivity and the thermo-electric power are obtained in the form of ratios of infinite determinants. By approximating to the exact solutions, relatively simple expressions are derived which are used to discuss the dependence of the conduction phenomena upon the temperature and upon the degree of degeneracy of the electron gas.

Current Induced G-Factor Shift in Modulation Doped Si Quantum Wells

2006 ◽  
Vol 984 ◽  
Author(s):  
Hans Malissa ◽  
Wolfgang Jantsch ◽  
Friedrich Schäffler ◽  
Zbyslaw Wilamowski
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Electric Current ◽  
Magnetic Field Direction ◽  
G Factor ◽  
Conduction Electrons ◽  
Simple Effect ◽  
Spin Resonance ◽  
The Magnetic Field ◽  
A Current

AbstractWe report the observation of a particularly simple effect of spin-orbit coupling which allows for efficient manipulation of spins by an electric current in semiconductor nanostructures. Passing an electric current density of j = 2.5 mA/cm through a modulation doped Si quantum well (density of 5 × 1011 cm-2) perpendicular to an in-plane magnetic field, we observe a shift of the spin resonance of the conduction electrons (CESR) by about 0.1 mT. This shift reverses sign when we invert (i) the current direction, (ii) the magnetic field direction and it vanishes for perpendicular magnetic field. We show that this current-induced shift in g-factor, i.e., its dependence on current and carrier density, its temperature dependence and its anisotropy can be consistently and quantitatively explained in terms of the Bychkov-Rashba coefficient determined earlier from the CESR broadening and the g-factor anisotropy [1]. Other sources of magnetic field (e.g. the Oersted effect) are negligible. This effect can be utilized for g-factor tuning, and thus for local spin manipulation: passing a current through some part of a sample may be utilized to bring those electrons into resonance with a microwave field. These spins are thus excited to Rabi oscillations and, using current pulses of suitable duration, π rotations (or by any other angle) can be achieved.

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