scholarly journals Critical behavior of the free surface of liquid 4He near the λ point

1979 ◽  
Vol 36 (5-6) ◽  
pp. 629-636 ◽  
Author(s):  
Victor K. Wong
Keyword(s):  
Free Surface ◽  
Critical Behavior ◽  
Λ Point

Thermal Emission of Electrons from Liquid Helium

1971 ◽  
Vol 26 (9) ◽  
pp. 1392-1397 ◽  
Author(s):  
W . Schoepe ◽  
G . W . Rayfield
Keyword(s):  
Free Surface ◽  
Liquid Helium ◽  
Energy Barrier ◽  
Thermal Emission ◽  
Escape Rate ◽  
Potential Well ◽  
Vapor Interface ◽  
Smoluchowski’S Equation ◽  
Λ Point ◽  
Liquid Vapor

Abstract The free surface of liquid helium acts as an energy barrier for electrons crossing the surface from the liquid into the vapor. The barrier is shown to be induced by the dielectric image-potential acting on the electrons below the liquid vapor interface. The application of an extracting electric field across the surface reduces the barrier and leads to a potential well below the surface which traps the electrons for extended periods of time. The escape into the vapor phase is shown to be dominated by thermal diffusion from the potential well according to Smoluchowski's equation. By measuring the escape rate a barrier height of 43.8 ± 0.7 K has been found. The top of the well lies 25 Å below the liquid vapor interface. Close to the λ-point and at higher temperatures the escape rate deviates from the theory. The relevancy of the present work for previous and further investigations of thermal eelctron emission from liquid helium is discussed.

Critical Behavior of then-Vector Model with a Free Surface

1980 ◽  
Vol 45 (19) ◽  
pp. 1581-1583 ◽  
Author(s):  
J. S. Reeve ◽  
A. J. Guttmann
Keyword(s):  
Free Surface ◽  
Critical Behavior ◽  
Vector Model

Irrelevance of Surface Anisotropies for Critical Behavior Near Free Surface

1982 ◽  
Vol 48 (25) ◽  
pp. 1767-1767 ◽  
Author(s):  
H. W. Diehl ◽  
E. Eisenriegler
Keyword(s):  
Free Surface ◽  
Critical Behavior

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

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