The computation of stress intensity factors in dissimilar materials

1978 ◽  
Vol 8 (1) ◽  
pp. 21-34 ◽  
Author(s):  
Chen-Chin Hong ◽  
Morris Stern
Keyword(s):  
Stress Intensity ◽  
Stress Intensity Factors ◽  
Dissimilar Materials ◽  
Intensity Factors

Reliability Evaluation of Flip Chip Using Stress Intensity Factors of an Interface Crack

2003 ◽  
Author(s):  
Won-Keun Kim ◽  
Toru Ikeda ◽  
Noriyuki Miyazaki
Keyword(s):  
Stress Intensity ◽  
Interface Crack ◽  
Stress Intensity Factors ◽  
Flip Chip ◽  
Liquid Crystal Display ◽  
Dissimilar Materials ◽  
Circuit Board ◽  
Electrical Performance ◽  
Intensity Factors ◽  
Adhesive Film

Anisotropic Conductive Adhesive Film (ACF) has been used for electronic assemblies such as the connection between a Liquid Crystal Display (LCD) panel and a flexible print circuit board (FPC). ACF is expected to be a key technology for flip chip packaging and chip size packaging. The goal of our work is to provide an optimum design scheme to achieve the best combination of electrical performance and mechanical reliability for electronic packages using the ACF. This study presents an evaluation technology for the delamination of the ACF connections. We utilized the stress intensity factors of an interface crack between jointed dissimilar materials. The evaluation technology presented herein was found to provide reliability of an electronic package using the ACF connection during the solder reflow process.

scholarly journals Crack Paralleling an Interface Between Dissimilar Materials

1987 ◽  
Vol 54 (4) ◽  
pp. 828-832 ◽  
Author(s):  
J. W. Hutchinson ◽  
M. E. Mear ◽  
J. R. Rice
Keyword(s):  
Stress Intensity ◽  
Interface Crack ◽  
Stress Intensity Factors ◽  
Dissimilar Materials ◽  
Complex Stress ◽  
External Loading ◽  
Universal Relation ◽  
Intensity Factors ◽  
Elastic Solids ◽  
Complex Stress Intensity Factor

A crack paralleling a bonded plane interface between two dissimilar isotropic elastic solids is considered. When the distance of the crack from the interface is small compared to the crack length itself and to other length scales characterizing the geometry, a simple universal relation exists between the Mode I and Mode II stress intensity factors and the complex stress intensity factor associated with the corresponding problem for the crack lying on the interface. In other words, if the influence of external loading and geometry on the interface crack is known, then this information can immediately be used to generate the stress intensity factors for the sub-interface crack. Conditions for cracks to propagate near and parallel to, but not along, an interface are derived.

Stress Intensity Factor Analysis of an Interfacial Corner Between Piezoelectric Bimaterials in a Two Dimensional Structure Using the H-Integral Method

2011 ◽  
Author(s):  
Toru Ikeda ◽  
Hiroshi Hirai ◽  
Mitsutoshi Abe ◽  
Masatsugu Chiba ◽  
Noriyuki Miyazaki
Keyword(s):  
Stress Intensity ◽  
Stress Intensity Factors ◽  
Piezoelectric Materials ◽  
Dissimilar Materials ◽  
Anisotropic Materials ◽  
Stroh Formalism ◽  
Asymptotic Solutions ◽  
Dimensional Structure ◽  
Electronic Packages ◽  
Intensity Factors

A corner of bonded dissimilar materials is one of the main causes of the failure of electronic packages or MEMS structures. These materials are sometimes anisotropic materials and piezoelectric materials. To evaluate the integrity of a corner of bonded piezoelectric materials is useful for the reliability of electronic packages and MEMS. Asymptotic solutions around the interfacial corner between piezoelectric bimaterials can be obtained by the combination of the Stroh formalism and the Williams eigenfunction expansion method. Based on an extension of the Stroh formalism and the H-integral derived from Betti’s reciprocal principle for piezoelectric problems, we analyzed the stress intensity factors (SIFs) and asymptotic solutions of piezoelectric bimaterials. The eigenvalues and eigenvectors of an interfacial corner between dissimilar piezoelectric anisotropic materials are determined using the key matrix. The H-integral for piezoelectric problems is introduced to obtain the scalar coefficients, which are related to the SIFs. We propose a new definition of the SIFs of an interfacial corner for piezoelectric materials, and we demonstrated the accuracy of the SIFs by comparing the asymptotic solutions with the results obtained by the finite element method (FEM) with very fine meshes. Proposed method can analyze the stress intensity factors of a corner and a crack between dissimilar isotropic materials, anisotropic materials and anisotropic piezoelectric materials.

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